CSD17579Q3A CSD17579Q3A 30 V N-Channel NexFET™ Power MOSFET | TI.com

CSD17579Q3A (ACTIVE) CSD17579Q3A 30 V N-Channel NexFET™ Power MOSFET

 

Description

This 30 V, 8.7 mΩ, SON 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

Features

  • Low Qg and Qgd
  • Low RDS(on)
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free
  • RoHS Compliant
  • Halogen Free
  • SON 3.3 mm × 3.3 mm Plastic Package

Parametrics

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Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=10 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) VGS (V) VGSTH typ (V) ID, silicon limited at Tc=25degC (A) ID, package limited (A) Logic level Rating
CSD17579Q3A Order now 30     Single     14.2     10.2     106     5.3     1.2     SON3x3     20     1.5     39     20     Yes     Catalog