CSD19536KTT CSD19536KTT 100 V N-Channel NexFET™ Power MOSFET | TI.com

CSD19536KTT (ACTIVE) CSD19536KTT 100 V N-Channel NexFET™ Power MOSFET

 

Description

This 100-V, 2-mΩ, D2PAK (TO-263) NexFET power MOSFET is designed to minimize losses in power conversion applications.

Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • D2PAK Plastic Package

Parametrics

Compare all products in N-channel MOSFET transistors Email Download to Excel
Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=10 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) VGS (V) VGSTH typ (V) ID, silicon limited at Tc=25degC (A) ID, package limited (A) Logic level Rating
CSD19536KTT Order now 100     Single       2.4     400     118     17     D2PAK     20     2.5     272     200     No     Catalog    
CSD18535KTT Order now 60     Single     2.9     2     400     63     10.4     D2PAK     20     1.9     279     200     Yes     Catalog    
CSD18536KTT Order now 60     Single     2.2     1.6     400     108     14     D2PAK     20     1.8     349     200     Yes     Catalog    
CSD18542KTT Order now 60     Single     5.1     4     400     44     6.9     D2PAK     20     1.8     170     200     Yes     Catalog    
CSD19505KTT Order now 80     Single       3.1     400     76     11     D2PAK     20     2.6     212     200     No     Catalog    
CSD19506KTT Order now 80     Single       2.3     400     120     20     D2PAK     20     2.5     291     200     No     Catalog    
CSD19532KTT Order now 100     Single