SLPS690A May 2017  – August 2017 CSD22205L

PRODUCTION DATA. 

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1Electrical Characteristics
    2. 5.2Thermal Information
    3. 5.3Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1Receiving Notification of Documentation Updates
    2. 6.2Community Resources
    3. 6.3Trademarks
    4. 6.4Electrostatic Discharge Caution
    5. 6.5Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1CSD22205L Package Dimensions
    2. 7.2Land Pattern Recommendation
    3. 7.3Stencil Recommendation

Features

  • Low Resistance
  • Small Footprint 1.2 mm × 1.2 mm
  • Low Profile 0.35-mm Height
  • Lead Free
  • Gate-Source Voltage Clamp
  • Gate ESD Protection
  • RoHS Compliant
  • Halogen Free

Applications

  • Battery Management
  • Load Switch
  • Battery Protection

Description

This –8-V, 8.2-mΩ, 1.2-mm × 1.2-mm Land Grid Array (LGA) NexFET™ device has been designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. The Land Grid Array (LGA) package is a silicon chip scale package with metal pads instead of solder balls.

Top View and Circuit Configuration
CSD22205L Pin_Map_and_Circuit_Configuration.gif

Product Summary

TA = 25°CVALUEUNIT
VDS Drain-to-Source Voltage–8V
Qg Gate Charge Total (–4.5 V)6.5nC
Qgd Gate Charge Gate-to-Drain1.0nC
RDS(on) Drain-to-Source On-ResistanceVGS = –1.5 V30
VGS = –1.8 V20
VGS = –2.5 V11.5
VGS = –4.5 V8.2
VGS(th) Threshold Voltage–0.7V

Device Information(1)

DEVICEQTYMEDIAPACKAGESHIP
CSD22205L30007-Inch Reel1.20-mm × 1.20-mm
Land Grid Array
Package
Tape and Reel
CSD22205LT250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°CVALUEUNIT
VDS Drain-to-Source Voltage–8V
VGS Gate-to-Source Voltage –6V
ID Continuous Drain Current(1)–7.4A
IDM Pulsed Drain Current(2)–71A
PD Power Dissipation(1)0.6W
TJ,
Tstg
Operating Junction Temperature,
Storage Temperature
–55 to 150°C
  1. Min Cu RθJA = 225°C/W.
  2. Pulse width ≤ 100 μs, duty cycle ≤ 1%.

RDS(on) vs VGS

CSD22205L D007_SLPS622.gif

RDS(on) vs VGS

CSD22205L D004_SLPS622_FP.gif