SLPS689 May 2017 CSD22206W

PRODUCTION DATA. 

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1Electrical Characteristics
    2. 5.2Thermal Information
    3. 5.3Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1Receiving Notification of Documentation Updates
    2. 6.2Community Resources
    3. 6.3Trademarks
    4. 6.4Electrostatic Discharge Caution
    5. 6.5Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1CSD22206W Package Dimensions
    2. 7.2Recommended Land Pattern

Features

  • Ultra-Low Resistance
  • Small Footprint 1.5 mm × 1.5 mm
  • Lead Free
  • Gate ESD Protection
  • RoHS Compliant
  • Halogen Free
  • Gate-Source Voltage Clamp

Applications

  • Load Switch Applications
  • Battery Management
  • Battery Protection

Description

This –8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

Top View and Circuit Configuration
CSD22206W Pin_Map_and_Circuit_Configuration_P3.gif

Product Summary

TA = 25°C TYPICAL VALUEUNIT
VDS Drain-to-Source Voltage–8V
Qg Gate Charge Total (–4.5 V)11.2nC
Qgd Gate Charge Gate-to-Drain1.8nC
RDS(on) Drain-to-Source On ResistanceVGS = –2.5 V6.8
VGS = –4.5 V4.7
VGS(th) Threshold Voltage –0.7V

Device Information

DEVICEQTYMEDIAPACKAGESHIP
CSD22206W30007-Inch Reel1.50-mm × 1.50-mm
Wafer BGA Package
Tape and Reel
CSD22206WT250

Absolute Maximum Ratings

TA = 25°CVALUEUNIT
VDSDrain-to-Source Voltage–8V
VGSGate-to-Source Voltage –6V
IDContinuous Drain Current(1)–5A
Pulsed Drain Current(2)–108A
PD Power Dissipation1.7W
TJ,
Tstg
Operating Junction,
Storage Temperature
–55 to 150°C
  1. Device operating at a temperature of 105°C.
  2. Typ RθJA = 75°C/W ,mounted on FR4 material with maximum Cu mounting area, pulse width ≤ 100 μs, duty cycle ≤ 1%.

RDS(on) vs VGS

CSD22206W D007_SLPS636.gif

Gate Charge

CSD22206W D004_SLPS636_FP.gif