CSD23203W CSD23203W 8 V P-Channel NexFET™ Power MOSFET | TI.com

CSD23203W (ACTIVE) CSD23203W 8 V P-Channel NexFET™ Power MOSFET

 

Description

This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.

Features

  • Ultra-Low Qg and Qgd
  • Low RDS(on)
  • Small Footprint
  • Low Profile 0.62-mm Height
  • Lead Free
  • RoHS Compliant
  • Halogen Free
  • CSP 1-mm × 1.5-mm Wafer Level Package

Parametrics

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Part number Order VDS (V) VGS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=2.5 V (mOhms) Rds(on) max at VGS=1.8 V (mOhms) Id peak (Max) (A) Id max cont (A) QG typ (nC) QGD typ (nC) QGS typ (nC) VGSTH typ (V) Package (mm) Rating
CSD23203W Order now -8     -6     Single     19.4     26.5     53     -54     -3     4.9     0.6     1.3     -0.8     WLP 1.0x1.5     Catalog