CSD23285F5 -12V, P ch NexFET MOSFET™, single LGA 0.8x1.5, 35mOhm | TI.com

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-12V, P ch NexFET MOSFET™, single LGA 0.8x1.5, 35mOhm



This 29-mΩ, –12-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.


  • Low On-Resistance
  • Low Qg and Qgd
  • Ultra-Small Footprint
    • 1.53 mm × 0.77 mm
    • 0.50-mm Pad Pitch
  • Low Profile
    • 0.35-mm Height
  • Integrated ESD Protection Diode
    • Rated > 4 kV HBM
    • Rated > 2 kV CDM
  • Lead and Halogen Free
  • RoHS Compliant

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Part number Order VDS (V) VGS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=2.5 V (mOhms) Rds(on) max at VGS=1.8 V (mOhms) Id peak (Max) (A) Id max cont (A) QG typ (nC) QGD typ (nC) QGS typ (nC) VGSTH typ (V) Package (mm)
CSD23285F5 Order now -12     -6     Single     35     47     80     -31     -3.3     3.2     0.48     0.66     -0.65     LGA 0.8x1.5