CSD23381F4 -12V, P ch NexFET MOSFET™, single LGA 0.6x1.0, 175mOhm | TI.com

CSD23381F4 (ACTIVE) -12V, P ch NexFET MOSFET™, single LGA 0.6x1.0, 175mOhm

 

Description

This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Features

  • Ultra-Low On-Resistance
  • Ultra-Low Qg and Qgd
  • High Operating Drain Current
  • Ultra-Small Footprint (0402 Case Size)
    • 1.0 mm × 0.6 mm
  • Ultra-Low Profile
    • 0.35 mm Max Height
  • Integrated ESD Protection Diode
    • Rated >4 kV HBM
    • Rated >2 kV CDM
  • Lead and Halogen Free
  • RoHS Compliant

Parametrics

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Part number Order VDS (V) VGS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=2.5 V (mOhms) Rds(on) max at VGS=1.8 V (mOhms) Id peak (Max) (A) Id max cont (A) QG typ (nC) QGD typ (nC) QGS typ (nC) VGSTH typ (V) Package (mm)
CSD23381F4 Order now -12     -8     Single     175     300     970     -9     -2.3     1.14     0.19     0.3     -0.95     LGA 0.6x1.0