CSD23382F4 P-Channel NexFET Power MOSFET | TI.com

CSD23382F4 (ACTIVE) P-Channel NexFET Power MOSFET

 

Description

This 66 mΩ, 12 V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Features

  • Low On-Resistance
  • Ultra-Low Qg and Qgd
  • Ultra-Small Footprint (0402 Case Size)
    • 1.0 mm × 0.6 mm
  • Low Profile
    • 0.35 mm Max Height
  • Integrated ESD Protection Diode
    • Rated >2 kV HBM
    • Rated >2 kV CDM
  • Pb Terminal Plating
  • Halogen Free
  • RoHS Compliant

Parametrics

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Part number Order VDS (V) VGS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=2.5 V (mOhms) Rds(on) max at VGS=1.8 V (mOhms) Id peak (Max) (A) Id max cont (A) QG typ (nC) QGD typ (nC) QGS typ (nC) VGSTH typ (V) Package (mm) Rating
CSD23382F4 Order now -12     -8     Single     76     105     199     -22     -3.5     1.04     0.15     0.5     -0.8     LGA 0.6x1.0     Catalog    
CSD23280F3 Order now -12     -6     Single     116     165     250     -11.4     -1.8     0.95     0.068     0.3     -0.65     LGA 0.6x0.7     Catalog    
CSD25480F3 Order now -20     -12     Single     159     260     840     -10.4     -1.7     0.7     0.1     0.26     -0.95     LGA 0.6x0.7     Catalog    
CSD25501F3 Order now -20     -20     Single     76     125     260     -13.6     -3.6     1.02     0.09     0.45     -0.75     LGA 0.6x0.7     Catalog