CSD25213W10 -20V, P ch NexFET MOSFET™, single WLP 1.0x1.0, 47mOhm | TI.com

CSD25213W10 (ACTIVE) -20V, P ch NexFET MOSFET™, single WLP 1.0x1.0, 47mOhm

-20V, P ch NexFET MOSFET™, single WLP 1.0x1.0, 47mOhm - CSD25213W10
Datasheet
 

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

Features

  • Ultra Low Qg and Qgd
  • Small Footprint 1mm × 1mm
  • Low Profile 0.62mm Height
  • Pb Free
  • Gate-Source Voltage Clamp
  • Gate ESD Protection
  • RoHS Compliant
  • Halogen Free

Parametrics

Compare all products in P-channel MOSFET transistors Email Download to Excel
Part number Order VDS (V) VGS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=2.5 V (mOhms) Rds(on) max at VGS=1.8 V (mOhms) Id peak (Max) (A) Id max cont (A) QG typ (nC) QGD typ (nC) QGS typ (nC) VGSTH typ (V) Package (mm)
CSD25213W10 Order now -20     -6     Single     47     67       -16     -1.6     2.2     0.14     0.74     -0.85     WLP 1.0x1.0    
CSD25480F3 Order now -20     -12     Single     159     260     840     -10.4     -1.7     0.7     0.1     0.26     -0.95     LGA 0.6x0.7    
CSD25501F3 Order now -20     -20     Single     76     125     260     -13.6     -3.6     1.02     0.09     0.45     -0.75     LGA 0.6x0.7