CSD25213W10 P-Channel NexFET™ Power MOSFET | TI.com

CSD25213W10 (ACTIVE)

P-Channel NexFET™ Power MOSFET

P-Channel NexFET™ Power MOSFET - CSD25213W10
Datasheet
 

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

Features

  • Ultra Low Qg and Qgd
  • Small Footprint 1mm × 1mm
  • Low Profile 0.62mm Height
  • Pb Free
  • Gate-Source Voltage Clamp
  • Gate ESD Protection
  • RoHS Compliant
  • Halogen Free

Parametrics

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Part number Order VDS (V) VGS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=2.5 V (mOhms) Rds(on) max at VGS=1.8 V (mOhms) Id peak (Max) (A) Id max cont (A) QG typ (nC) QGD typ (nC) QGS typ (nC) VGSTH typ (V) Package (mm) Rating
CSD25213W10 Order now -20     -6     Single     47     67       -16     -1.6     2.2     0.14     0.74     -0.85     WLP 1.0x1.0     Catalog    
CSD25480F3 Order now -20     -12     Single     159     260     840     -10.4     -1.7     0.7     0.1     0.26     -0.95     LGA 0.6x0.7     Catalog    
CSD25501F3 Order now -20     -20     Single     76     125     260     -13.6     -3.6     1.02     0.09     0.45     -0.75     LGA 0.6x0.7     Catalog