CSD25304W1015 CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET | TI.com

CSD25304W1015 (ACTIVE) CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

 

Description

This 27 mΩ, –20 V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1.0 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.

Features

  • Ultra-Low Qg and Qgd
  • Small Footprint
  • Low Profile 0.62 mm Height
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • CSP 1 × 1.5 mm Wafer Level Package

Parametrics

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Part number Order VDS (V) VGS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=2.5 V (mOhms) Rds(on) max at VGS=1.8 V (mOhms) Id peak (Max) (A) Id max cont (A) QG typ (nC) QGD typ (nC) QGS typ (nC) VGSTH typ (V) Package (mm) Rating
CSD25304W1015 Order now -20     -8     Single     32.5     45.5     92     -41     -3     3.3     0.5     0.7     -0.8     WLP 1.0x1.5     Catalog