CSD25501F3 –20-V P-Channel FemtoFET™ MOSFET | TI.com

CSD25501F3 (ACTIVE)

–20-V P-Channel FemtoFET™ MOSFET

 

Description

This –20-V, 64-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10-kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6 V, depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above –6 V.

Features

  • Low On-Resistance
  • Ultra-Low Qg and Qgd
  • Ultra-Small Footprint
    • 0.7 mm × 0.6 mm
  • Low Profile
    • 0.22-mm Max Height
  • Integrated ESD Protection Diode
  • Lead and Halogen Free
  • RoHS Compliant

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Parametrics

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Part number Order VDS (V) VGS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=2.5 V (mOhms) Rds(on) max at VGS=1.8 V (mOhms) Id peak (Max) (A) Id max cont (A) QG typ (nC) QGD typ (nC) QGS typ (nC) VGSTH typ (V) Package (mm) Rating
CSD25501F3 Order now -20     -20     Single     76     125     260     -13.6     -3.6     1.02     0.09     0.45     -0.75     LGA 0.6x0.7     Catalog    
CSD23280F3 Order now -12     -6     Single     116     165     250     -11.4     -1.8     0.95     0.068     0.3     -0.65     LGA 0.6x0.7     Catalog    
CSD23382F4 Order now -12     -8     Single     76     105     199     -22     -3.5     1.04     0.15     0.5     -0.8     LGA 0.6x1.0     Catalog    
CSD25213W10 Order now -20     -6     Single     47     67       -16     -1.6     2.2     0.14     0.74     -0.85     WLP 1.0x1.0     Catalog    
CSD25480F3 Order now -20     -12     Single     159     260     840     -10.4     -1.7     0.7     0.1     0.26     -0.95     LGA 0.6x0.7     Catalog