CSD75208W1015 -20V, P ch NexFET MOSFET™, dual Common Source WLP 1.0x1.5, 108mOhm | TI.com

CSD75208W1015
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-20V, P ch NexFET MOSFET™, dual Common Source WLP 1.0x1.5, 108mOhm

 

Description

This device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

Features

  • Dual P-Channel MOSFETs
  • Common Source Configuration
  • Small Footprint 1 mm × 1.5 mm
  • Gate-Source Voltage Clamp
  • Gate ESD Protection –3 kV
  • Pb Free
  • RoHS Compliant
  • Halogen Free

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Parametrics

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Part number Order VDS (V) VGS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=2.5 V (mOhms) Rds(on) max at VGS=1.8 V (mOhms) Id peak (Max) (A) Id max cont (A) QG typ (nC) QGD typ (nC) QGS typ (nC) VGSTH typ (V) Package (mm)
CSD75208W1015 Order now -20     -6     Dual Common Source     108     150     285     -22     -1.6     1.9     0.23     0.48     -0.8     WLP 1.0x1.5