CSD85301Q2 CSD85301Q2 Dual N-Channel NexFET™ Power MOSFET | TI.com

CSD85301Q2 (ACTIVE) CSD85301Q2 Dual N-Channel NexFET™ Power MOSFET

 

Description

The CSD85301Q2 is a 20 V, 23 mΩ N-Channel device with dual independent MOSFETs in a SON 2 × 2 mm plastic package. The two FETs were designed to be used in a half bridge configuration for synchronous buck and other power supply applications. Additionally, this part can be used for adaptor, USB input protection and battery charging applications. The dual FETs feature low drain to source on-resistance that minimizes losses and offers low component count for space constrained applications.

Features

  • Low On-Resistance
  • Dual Independent MOSFETs
  • Space Saving SON 2 × 2 mm Plastic Package
  • Optimized for 5 V Gate Driver
  • Avalanche Rated
  • Pb and Halogen Free
  • RoHS Compliant

Parametrics

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Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=10 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) RDS(on) typ at VGS=2.5 V (Typ) (mOhm) VGS (V) VGSTH typ (V) ID, package limited (A) Logic level Rating
CSD85301Q2 Order now 20     Dual     27       26     4.2     1     SON2x2     33     10     0.9     5     Yes     Catalog    
CSD87502Q2 Order now 30     Dual     42     32.4     23     2.2     0.5     SON2x2       20     1.6     5     Yes     Catalog