CSD85302L 20V, N ch NexFET MOSFET™, dual common drain LGA 1.35x1.35, 24mOhm | TI.com

CSD85302L (ACTIVE) 20V, N ch NexFET MOSFET™, dual common drain LGA 1.35x1.35, 24mOhm

 

Description

This 20 V, 18.7 mΩ, 1.35 mm × 1.35 mm LGA Dual NexFET power MOSFET is designed to minimize resistance in the smallest footprint. Its small footprint and common drain configuration make the device ideal for battery-powered applications in small handheld devices.

Features

  • Common Drain Configuration
  • Low On-Resistance
  • Small Footprint of 1.35 mm × 1.35 mm
  • Pb Free and Halogen Free
  • RoHS Compliant
  • ESD HBM Protection >2.5 kV

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Parametrics

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Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=10 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) RDS(on) typ at VGS=2.5 V (Typ) (mOhm) VGS (V) VGSTH typ (V) Logic level Rating
CSD85302L Order now 20     Dual Common Drain     24       37     6     1.4     LGA 1.35x1.35     29     10     0.9     Yes     Catalog    
CSD83325L Order now 12     Dual     5.9       52     8.4     1.9     LGA     8.4     10     0.95     Yes     Catalog    
CSD87313DMS Order now 30     Dual Common Drain     5.5         28     6     SON3x3     6.6     10     0.9     Yes     Catalog    
CSD87501L Order now 30     Dual Common Drain     5.5     3.9     72     15     6     LGA       20     1.8     Yes     Catalog