CSD85312Q3E Dual 20-V N-Channel NexFET™ Power MOSFETs, CSD85312Q3E | TI.com

CSD85312Q3E (ACTIVE) Dual 20-V N-Channel NexFET™ Power MOSFETs, CSD85312Q3E

Dual 20-V N-Channel NexFET™ Power MOSFETs, CSD85312Q3E - CSD85312Q3E
Datasheet
 

Description

The CSD85312Q3E is a 20 V common-source, dual N-channel device designed for adaptor or USB input protection. This SON 3.3 × 3.3 mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.

Features

  • Common Source Connection
  • Low Drain to Drain On-Resistance
  • Space Saving SON 3.3 × 3.3 mm Plastic
    Package
  • Optimized for 5 V Gate Drive
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free

Parametrics

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Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) VGS (V) VGSTH typ (V) ID, silicon limited at Tc=25degC (A) ID, package limited (A) Logic level Rating
CSD85312Q3E Order now 20     Dual Common Source     14     76     11.7     1.6     SON3x3     10     1.1     39     39     Yes     Catalog