CSD86311W1723 Dual N-Channel NexFET™ Power MOSFET | TI.com

CSD86311W1723 (ACTIVE) Dual N-Channel NexFET™ Power MOSFET

Dual N-Channel NexFET™ Power MOSFET  - CSD86311W1723
Datasheet
 

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. Low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as DC-DC converter applications

Features

  • Dual N-Ch MOSFETs
  • Common Source Configuration
  • Small Footprint 1.7 mm × 2.3 mm
  • Ultra Low Qg and Qgd
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • APPLICATIONS
    • Battery Management
    • Battery Protection
    • DC-DC Converters

Parametrics

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Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) VGS (V) VGSTH typ (V) ID, silicon limited at Tc=25degC (A) Logic level Rating
CSD86311W1723 Order now 25     Dual Common Source     42     4.5     3.1     0.33     WLP1.7x2.3     10     1     4.5     Yes     Catalog