SLPS642 April   2017 CSD87313DMS

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5 Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 DMS Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DMS|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Low-Source-to-Source On Resistance
  • Dual Common Drain N-Channel MOSFETs
  • Optimized for 5-V Gate Drive
  • Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package

2 Applications

  • USB Type-C™ and Power Delivery (PD) VBus Protection
  • Battery Protection
  • Load Switch

3 Description

The CSD87313DMS is a 30-V common drain, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3-mm × 3.3-mm device has low-source-to-source on resistance that minimizes losses and offers low-component count for space constrained applications.

Schematic
CSD87313DMS Schematic.gif

Product Summary

TA = 25°C VALUE UNIT
VS1S2 Source1-to-Source2 Voltage 30 V
Qg Gate Charge Total (4.5 V) 28 nC
Qgd Gate Charge Gate-to-Drain 6.0 nC
RS1S2(on) Max Source1-to-Source2 On Resistance VGS = 2.5 V 9.6 mΩ
VGS = 4.5 V 5.5
VGS(th) Threshold Voltage 0.9 V

Device Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD87313DMS 2500 13-Inch Reel SON
3.30-mm × 3.30-mm
Plastic Package		 Tape and Reel
CSD87313DMST 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C unless otherwise stated VALUE UNIT
VS1S2 Source1-to-Source2 Voltage 30 V
VGS Gate-to-Source Voltage(1) ±10 V
IS1S2 Continuous Source Current(2) 17 A
ISM Pulsed Source Current, TA = 25°C(2)(3) 120 A
PD Power Dissipation(2) 2.7 W
Power Dissipation(4) 1
TJ, Tstg Operating Junction,
Storage Temperature		 –55 to 150 °C
EAS Avalanche Energy, Single Pulse,
ID = 37 A, L = 0.1 mH, RG = 25 Ω		 67 mJ
  1. VG1S1 should not exceed ±10 V and VG2S2 should not exceed ±10 V.
  2. Typical RθJA = 45°C/W when mounted on a 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB.
  3. Duty cycle ≤ 2%, pulse duration ≤ 300 µs.
  4. Typical RθJA = 125°C/W on a minimum 2-oz Cu pad.

RS1S2(ON) vs VGS

CSD87313DMS D007_SLPS634.gif

Gate Charge

CSD87313DMS D004_SLPS634_FP.gif