SLPS642 April 2017 CSD87313DMS


  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5 Specifications
    1. 5.1Electrical Characteristics
    2. 5.2Thermal Information
    3. 5.3Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1Receiving Notification of Documentation Updates
    2. 6.2Community Resources
    3. 6.3Trademarks
    4. 6.4Electrostatic Discharge Caution
    5. 6.5Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1DMS Package Dimensions
    2. 7.2Recommended PCB Pattern
    3. 7.3Recommended Stencil Opening

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DMS|8
Orderable Information


  • Low-Source-to-Source On Resistance
  • Dual Common Drain N-Channel MOSFETs
  • Optimized for 5-V Gate Drive
  • Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package


  • USB Type-C™ and Power Delivery (PD) VBus Protection
  • Battery Protection
  • Load Switch


The CSD87313DMS is a 30-V common drain, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3-mm × 3.3-mm device has low-source-to-source on resistance that minimizes losses and offers low-component count for space constrained applications.

CSD87313DMS Schematic.gif

Product Summary

VS1S2Source1-to-Source2 Voltage30V
QgGate Charge Total (4.5 V)28nC
QgdGate Charge Gate-to-Drain6.0nC
RS1S2(on)Max Source1-to-Source2 On Resistance VGS = 2.5 V9.6
VGS = 4.5 V5.5
VGS(th)Threshold Voltage0.9V

Device Information(1)

CSD87313DMS250013-Inch ReelSON
3.30-mm × 3.30-mm
Plastic Package
Tape and Reel
CSD87313DMST2507-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C unless otherwise statedVALUEUNIT
VS1S2Source1-to-Source2 Voltage30V
VGSGate-to-Source Voltage(1)±10V
IS1S2Continuous Source Current(2)17A
ISMPulsed Source Current, TA = 25°C(2)(3)120A
PDPower Dissipation(2)2.7W
Power Dissipation(4)1
TJ, Tstg Operating Junction,
Storage Temperature
–55 to 150°C
EASAvalanche Energy, Single Pulse,
ID = 37 A, L = 0.1 mH, RG = 25 Ω
  1. VG1S1 should not exceed ±10 V and VG2S2 should not exceed ±10 V.
  2. Typical RθJA = 45°C/W when mounted on a 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB.
  3. Duty cycle ≤ 2%, pulse duration ≤ 300 µs.
  4. Typical RθJA = 125°C/W on a minimum 2-oz Cu pad.

RS1S2(ON) vs VGS

CSD87313DMS D007_SLPS634.gif

Gate Charge

CSD87313DMS D004_SLPS634_FP.gif