CSD87313DMS 30V, N ch NexFET MOSFET™, dual common drain SON3x3, 5.5mOhm | TI.com

CSD87313DMS (ACTIVE) 30V, N ch NexFET MOSFET™, dual common drain SON3x3, 5.5mOhm

 

Description

The CSD87313DMS is a 30-V common drain, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3-mm × 3.3-mm device has low-source-to-source on resistance that minimizes losses and offers low-component count for space constrained applications.

Features

  • Low-Source-to-Source On Resistance
  • Dual Common Drain N-Channel MOSFETs
  • Optimized for 5-V Gate Drive
  • Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package

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Parametrics

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Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=10 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) RDS(on) typ at VGS=2.5 V (Typ) (mOhm) VGS (V) VGSTH typ (V) Logic level Rating
CSD87313DMS Order now 30     Dual Common Drain     5.5         28     6     SON3x3     6.6     10     0.9     Yes     Catalog    
CSD83325L Order now 12     Dual     5.9       52     8.4     1.9     LGA     8.4     10     0.95     Yes     Catalog    
CSD85302L Order now 20     Dual Common Drain     24       37     6     1.4     LGA 1.35x1.35     29     10     0.9     Yes     Catalog    
CSD87501L Order now 30     Dual Common Drain     5.5     3.9     72     15     6     LGA       20     1.8     Yes     Catalog