CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs | TI.com

CSD87313DMS (ACTIVE)

30-V Dual N-Channel NexFET™ Power MOSFETs

30-V Dual N-Channel NexFET™ Power MOSFETs - CSD87313DMS
 

Description

The CSD87313DMS is a 30-V common drain, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3-mm × 3.3-mm device has low-source-to-source on resistance that minimizes losses and offers low-component count for space constrained applications.

Features

  • Low-Source-to-Source On Resistance
  • Dual Common Drain N-Channel MOSFETs
  • Optimized for 5-V Gate Drive
  • Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package

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Parametrics Compare all products in N-channel MOSFET transistors

 
VDS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=10V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
RDS(on) Typ at VGS=2.5V (Typ) (mOhm)
VGS (V)
VGSTH Typ (V)
Logic Level
Rating
CSD87313DMS CSD83325L CSD85302L CSD87501L
30     12     20     30    
Dual Common Drain     Dual     Dual Common Drain     Dual Common Drain    
5.5     5.9     24     5.5    
      3.9    
  52     37     72    
28     8.4     6     15    
6     1.9     1.4     6    
SON3x3     LGA     LGA 1.35x1.35     LGA    
6.6     8.4     29      
10     10     10     20    
0.9     0.95     0.9     1.8    
Yes     Yes     Yes     Yes    
Catalog     Catalog     Catalog     Catalog