SLPS661 September 2017 CSD87503Q3E


  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5 Specifications
    1. 5.1Electrical Characteristics
    2. 5.2Thermal Information
    3. 5.3Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1Receiving Notification of Documentation Updates
    2. 6.2Community Resources
    3. 6.3Trademarks
    4. 6.4Electrostatic Discharge Caution
    5. 6.5Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1Q3 Package Dimensions
    2. 7.2Recommended PCB Pattern
    3. 7.3Recommended Stencil Opening

Package Options

Mechanical Data (Package|Pins)
  • DTD|8
Orderable Information


  • Dual N-Ch Common Source MOSFETs
  • Optimized for 5-V Gate Drive
  • Low-Thermal Resistance
  • Low Qg and Qgd
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package


  • USB Type-C/PD VBus Protection
  • Battery Protection
  • Load Switch


The CSD87503Q3E is a 30-V, 13.5-mΩ, common source, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3 × 3.3 mm device has low drain-to-drain on-resistance that minimizes losses and offers low component count for space constrained applications.

Top View

CSD87503Q3E TopView.gif

Circuit Image

CSD87503Q3E Dev_Schem.gif

Product Summary

VDSDrain-to-Source Voltage30V
QgGate Charge Total (4.5 V)13.4nC
QgdGate Charge Gate-to-Drain5.8nC
RDD(on)Drain-to-Drain On-ResistanceVGS = 4.5 V17.3
VGS = 10 V13.5
VGS(th)Threshold Voltage1.7V

Device Information(1)

CSD87503Q3E250013-Inch ReelSON
3.30-mm × 3.30-mm
Plastic Package
Tape and Reel
CSD87503Q3ET2507-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

VDSDrain-to-Source Voltage30V
VGSGate-to-Source Voltage±20V
ID1, D2Continuous Drain-to-Drain Current (Package Limited)10A
IDSContinuous Drain-to-Source Current (Package Limited)1.5A
ID1, D2MPulsed Drain-to-Drain Current,(1)89A
PDPower Dissipation(2)2.6W
PDPower Dissipation, TC = 25°C15.6W
TJ ,
Operating Junction,
Storage Temperature
–55 to 150°C
  1. Max RθJC = 8°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.
  2. Typical RθJA = 50°C/W when mounted on a 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB.

RDD(on) vs VGS

CSD87503Q3E D007_SLPS661.gif

Revision History

September 2017*Initial release.