DRV8343-Q1 Automotive 60-V three-phase smart gate driver | TI.com

DRV8343-Q1 (PREVIEW)

Automotive 60-V three-phase smart gate driver

 

Sample availability

PHP package is in preview. Preproduction samples are available (PDRV8343HPHPRQ1 and PDRV8343SPHPRQ1).  Request now

Description

The DRV8343-Q1 device is an integrated gate driver for three-phase applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The dedicated Source and Drain pins enable the independent MOSFET control for solenoid application. The DRV8343-Q1 generates the correct gate drive voltages using an integrated charge pump for the high-side MOSFETs and a linear regulator for the low-side MOSFETs. The Smart Gate Drive architecture supports peak gate drive currents up to 1-A source and 2-A. The DRV8343-Q1 can operate from a single power supply and supports a wide input supply range of 5.5 to 60 V for the gate driver.

The 6x, 3x, 1x, and independent input PWM modes allow for simple interfacing to controller circuits. The configuration settings for the gate driver and device are highly configurable through the SPI or hardware (H/W) interface. The DRV8343-Q1 device integrates three low-side current sense amplifiers that allow bidirectional current sensing on all three phases of the drive stage.

A low-power sleep mode is provided to achieve low quiescent current. Internal protection functions are provided for undervoltage lockout, charge pump fault, MOSFET overcurrent, MOSFET short circuit, phase-node short to supply and ground, gate driver fault, and overtemperature. Fault conditions are indicated on the nFAULT pin with details through the device registers for the SPI device variant.

Features

  • AEC-Q100 Qualified for Automotive Applications
    • Temperature Grade 1: –40°C ≤ TA ≤ 125°C
    • HBM ESD Classification Level 2
  • Triple Half-Bridge Gate Driver
    • Dedicated Source (SHx) and Drain (DLx) pins to support independent MOSFET control
    • Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS)
  • Smart Gate Drive Architecture
    • Adjustable Slew Rate Control
    • 1.5-mA to 1-A Peak Source Current
    • 3-mA to 2-A Peak Sink Current
  • Integrated Gate Driver Power Supplies
    • Supports 100% PWM Duty Cycle
    • High-Side Charge Pump
    • Low-Side Linear Regulator
  • 3 Integrated Current Sense Amplifiers (CSAs)
    • Adjustable Gain (5, 10, 20, 40 V/V)
    • Bidirectional or Unidirectional Support
  • SPI and Hardware Interface Available
  • 6x, 3x, 1x, and Independent PWM Modes
  • Supports 3.3-V, and 5-V Logic Inputs
  • Charge Pump Output can be used to Drive the Reverse Supply Protection MOSFET
  • Linear Voltage Regulator, 3.3 V, 30 mA
  • Integrated Protection Features
    • VM Undervoltage Lockout (UVLO)
    • Charge Pump Undervoltage (CPUV)
    • Short to Battery (SHT_BAT)
    • Short to Ground (SHT_GND)
    • MOSFET Overcurrent Protection (OCP)
    • Gate Driver Fault (GDF)
    • Thermal Warning and Shutdown (OTW/OTSD)
    • Fault Condition Indicator (nFAULT)

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Parametrics

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Part number Order Rating Control method Architecture Gate drive (A) Vs (Min) (V) Vs ABS (Max) (V) Control I/F Operating temperature range (C) Package Group Approx. price (US$)
DRV8343-Q1 Order now Automotive     External Control
Trapezoidal Control    
  1     5.5     65     6xPWM
3xPWM
1xPWM    
-40 to 125     HTQFP | 48     2.88 | 1ku    
DRV8305-Q1 Order now Automotive     External Control     Gate Driver     1     4.4     45     6xPWM
3xPWM
1xPWM    
-40 to 125
-40 to 150    
HTQFP | 48     2.65 | 1ku