The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
|Part number||Order||Features||Operating temperature range (C)||Rating||Package Group||Package size: mm2:W x L (PKG)|
||Single Supply||-40 to 125||Catalog||HVSSOP | 8||8HVSSOP: 15 mm2: 4.9 x 3 (HVSSOP | 8)|