EMB1412 EMB1412 MOSFET Gate Driver | TI.com

EMB1412
This product has been released to the market and is available for purchase. For some products, newer alternatives may be available.
EMB1412 MOSFET Gate Driver

EMB1412 MOSFET Gate Driver - EMB1412
Datasheet
 

Description

The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

Features

  • Compound CMOS and Bipolar Outputs Reduce
    Output Current Variation
  • 7 A Sink/3 A Source Current
  • Fast Propagation Times (25 ns Typical)
  • Fast Rise and Fall Times (14 ns/12 ns Rise
    Fall with 2 nF Load)
  • Inverting and Non-Inverting Inputs Provide
    Either Configuration with a Single Device
  • Supply Rail Under-Voltage Lockout Protection
  • Dedicated Input Ground (IN_REF) for Split
    Supply or Single Supply Operation
  • Thermally Enhanced 8-Pin VSSOP Package
  • Output Swings from VCC to VEE Which can
    be Negative Relative to Input Ground

Parametrics

Compare all products in Battery monitors & balancers Email Download to Excel
Part number Order Features Operating temperature range (C) Rating Package Group Package size: mm2:W x L (PKG)
EMB1412 Order now Single Supply     -40 to 125     Catalog     HVSSOP | 8     8HVSSOP: 15 mm2: 4.9 x 3 (HVSSOP | 8)