SLVSE49A July 2017 – July 2017 ESD401
PRODUCTION DATA.
The ESD401 is a bidirectional ESD Protection Diode with ultra-low clamping voltage. This device can dissipate ESD strikes above the maximum level specified by the IEC 61000-4-2 International Standard. The ultra-low clamping makes this device ideal for protecting any sensitive signal pins.
The I/O pins can withstand ESD events up to ±24-kV contact and ±30-kV air gap. An ESD-surge clamp diverts the current to ground.
The I/O pins can withstand an electrical fast transient burst of up to 80 A (5/50 ns waveform, 4 kV with 50-Ω impedance). An ESD-surge clamp diverts the current to ground.
The I/O pins can withstand surge events up to 4.5 A and 67W (8/20 µs waveform). An ESD-surge clamp diverts this current to ground.
The capacitance between each I/O pin to ground is 0.77 pF (typical) and 0.95 pF (maximum).
The DC breakdown voltage of each I/O pin is ±8.3 V typical. This ensures that sensitive equipment is protected from surges above the reverse standoff voltage of ±5.5 V.
The I/O pins feature an low leakage current of 10 nA (maximum) with a bias of ±2.5 V.
The I/O pins feature an ESD clamp that is capable of clamping the voltage to 24 V (TLP IPP = 16 A).
This device features an industrial operating range of –40°C to +125°C.
The layout of this device makes it simple and easy to add protection to an existing layout. The packages offers flow-through routing, requiring minimal modification to an existing layout.
The ESD401 is a passive integrated circuit that triggers when voltages are above VBRF or below VBRR. During ESD events, voltages as high as ±24 kV (contact) or ±30 kV ( air) can be directed to ground via the internal diode network. When the voltages on the protected line fall below the trigger levels of ESD401 (usually within 10s of nano-seconds) the device reverts to passive.
Figure 11 shows typical TLP behavior of bi-directional ESD device that does not exhibit snapback.