SBOS632 September 2015 INA188

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA. 

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1Absolute Maximum Ratings
    2. 6.2ESD Ratings
    3. 6.3Recommended Operating Conditions
    4. 6.4Thermal Information
    5. 6.5Electrical Characteristics: VS = ±4 V to ±18 V (VS = 8 V to 36 V)
    6. 6.6Electrical Characteristics: VS = ±2 V to < ±4 V (VS = 4 V to < 8 V)
    7. 6.7Typical Characteristics
  7. Detailed Description
    1. 7.1Overview
    2. 7.2Functional Block Diagram
    3. 7.3Feature Description
      1. 7.3.1Inside the INA188
      2. 7.3.2Setting the Gain
        1. 7.3.2.1Gain Drift
      3. 7.3.3Zero Drift Topology
        1. 7.3.3.1Internal Offset Correction
        2. 7.3.3.2Noise Performance
        3. 7.3.3.3Input Bias Current Clock Feedthrough
      4. 7.3.4 EMI Rejection
      5. 7.3.5Input Protection and Electrical Overstress
      6. 7.3.6Input Common-Mode Range
    4. 7.4Device Functional Modes
      1. 7.4.1Single-Supply Operation
      2. 7.4.2Offset Trimming
      3. 7.4.3Input Bias Current Return Path
      4. 7.4.4Driving the Reference Pin
      5. 7.4.5Error Sources Example
  8. Application and Implementation
    1. 8.1Application Information
    2. 8.2Typical Application
      1. 8.2.1Design Requirements
      2. 8.2.2Detailed Design Procedure
      3. 8.2.3Application Curve
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1Layout Guidelines
    2. 10.2Layout Example
  11. 11Device and Documentation Support
    1. 11.1Device Support
      1. 11.1.1Development Support
    2. 11.2Documentation Support
      1. 11.2.1Related Documentation
    3. 11.3Community Resources
    4. 11.4Trademarks
    5. 11.5Electrostatic Discharge Caution
    6. 11.6Glossary
  12. 12Mechanical, Packaging, and Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MINMAXUNIT
VoltageSupply±20V
40 (single supply)
Current±10mA
Analog input range(2) (V–) – 0.5(V+) + 0.5V
Output short-circuit(3) Continuous
TemperatureOperating range, TA –55150°C
Junction, TJ 150
Storage temperature, Tstg–65 150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Input pins are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3 V beyond the supply rails must be current limited to 10 mA or less.
(3) Short-circuit to ground.

6.2 ESD Ratings

VALUEUNIT
V(ESD)Electrostatic dischargeHuman-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)±2500V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MINNOMMAXUNIT
VSSupply voltage4 (±2) 36 (±18) V
Specified temperature -40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) INA188UNIT
D (SOIC)DRG (WSON)
8 PINS8 PINS
RθJA Junction-to-ambient thermal resistance 125145°C/W
RθJC(top) Junction-to-case (top) thermal resistance 8075°C/W
RθJB Junction-to-board thermal resistance 6839°C/W
ψJT Junction-to-top characterization parameter 3214°C/W
ψJB Junction-to-board characterization parameter 68105°C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/AN/A°C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics: VS = ±4 V to ±18 V (VS = 8 V to 36 V)

At TA = 25°C, RL = 10 kΩ, VREF = VS / 2, and G = 1, unless otherwise noted.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
INPUT(1)
VOSI Input stage offset voltageAt RTI(2) ±25 ±55μV
At RTI, TA = –40°C to +125°C±0.08±0.2μV/°C
VOSO Output stage offset voltageAt RTI±60±170μV
At RTI, TA = –40°C to +125°C±0.2±0.35μV/°C
VOS Offset voltageAt RTI±25 ±60 / G±55 ±170 / GμV
At RTI, TA = –40°C to +125°C±0.2 ±0.35 / GμV/°C
PSRRPower-supply rejection ratioG = 1, VS = 4 V to 36 V, VCM = VS / 2±0.7±2.25µV/V
G = 10, VS = 4 V to 36 V, VCM = VS / 2±0.6
G = 100, VS = 4 V to 36 V, VCM = VS / 2±0.45
G = 1000, VS = 4 V to 36 V, VCM = VS / 2±0.3±0.8
Long-term stability1(3) µV
Turn-on time to specified VOSI See the Typical Characteristics
zidDifferential input impedance100 || 6GΩ || pF
zicCommon-mode input impedance100 || 9.5
VCM Common-mode voltage rangeThe input signal common-mode range can be calculated with this tool(V–) + 0.1 (V+) – 1.5V
CMRRCommon-mode rejection ratioG = 1, at dc to 60 Hz, VCM = (V–) + 1.0 V to
(V+) – 2.5 V
8490dB
G = 10, at dc to 60 Hz, VCM = (V–) + 1.0 V to (V+) – 2.5 V104110
G = 100, at dc to 60 Hz, VCM = (V–) + 1.0 V to (V+) – 2.5 V118130
G = 1000, at dc to 60 Hz, VCM = (V–) + 1.0 V to (V+) – 2.5 V118130
INPUT BIAS CURRENT
IIBInput bias current±850±2500pA
TA = –40°C to +125°CSee Figure 10pA/°C
IOS Input offset current±850±2500pA
TA = –40°C to +125°CSee Figure 11pA/°C
INPUT VOLTAGE NOISE
eNI Input voltage noisef = 1 kHz, G = 100, RS = 0 Ω12.5nV/√Hz
f = 0.1 Hz to 10 Hz, G = 100, RS = 0 Ω0.25μVPP
eNO Output voltage noisef = 1 kHz, G = 100, RS = 0 Ω118nV/√Hz
f = 0.1 Hz to 10 Hz, G = 100, RS = 0 Ω2.5μVPP
iN Input current noisef = 1 kHz440fA/√Hz
f = 0.1 Hz to 10 Hz10pAPP
GAIN
GGain equation1 + (50 kΩ / RG)V/V
Gain range11000V/V
EGGain errorG = 1, (V–) + 0.5 V ≤ VO ≤ (V+) – 1.5 V±0.007%±0.025%
G = 10, (V–) + 0.5 V ≤ VO ≤ (V+) – 1.5 V±0.05%±0.20%
G = 100, (V–) + 0.5 V ≤ VO ≤ (V+) – 1.5 V±0.06%±0.20%
G = 1000, (V–) + 0.5 V ≤ VO ≤ (V+) – 1.5 V±0.2%±0.50%
Gain versus temperatureG = 1, TA = –40°C to +125°C15ppm/°C
G > 1(4) , TA = –40°C to +125°C1550
Gain nonlinearityG = 1, VO = –10 V to +10 V38ppm
G > 1, VO = –10 V to +10 VSee Figure 42 to Figure 45
OUTPUT
Output voltage swing from rail(5) RL = 10 kΩ(5) 220250mV
Capacitive load drive1nF
ISC Short-circuit currentContinuous to common±18mA
FREQUENCY RESPONSE
BWBandwidth, –3 dBG = 1600kHz
G = 1095
G = 10015
G = 10001.5
SRSlew rateG = 1, VS = ±18 V, VO = 10-V step0.9V/μs
G = 100, VS = ±18 V, VO = 10-V step0.17
tS Settling timeTo 0.1%G = 1, VS = ±18 V, VSTEP = 10 V50μs
G = 100, VS = ±18 V, VSTEP = 10 V400
To 0.01%G = 1, VS = ±18 V, VSTEP = 10 V60μs
G = 100, VS = ±18 V, VSTEP = 10 V500
Overload recovery50% overdrive75μs
REFERENCE INPUT
RIN Input impedance40
Voltage rangeV–V+V
POWER SUPPLY
Voltage range Single436V
Dual±2±18
IQ Quiescent current VIN = VS / 21.41.6mA
TA = –40°C to +125°C1.8
TEMPERATURE RANGE
Specified temperature range–40125°C
Operating temperature range–55150°C
(1) Total VOS, referred-to-input = (VOSI) + (VOSO / G).
(2) RTI = Referred-to-input.
(3) 300-hour life test at 150°C demonstrated a randomly distributed variation of approximately 1 μV.
(4) Does not include effects of external resistor RG.
(5) See Typical Characteristics curves, Output Voltage Swing vs Output Current (Figure 19 to Figure 22).

6.6 Electrical Characteristics: VS = ±2 V to < ±4 V (VS = 4 V to < 8 V)

At TA = 25°C, RL = 10 kΩ, VREF = VS / 2, and G = 1, unless otherwise noted. Specifications not shown are identical to the Electrical Characteristics table for VS = ±2 V to ±18 V (VS = 8 V to 36 V).
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
INPUT(1)
VOSI Input stage offset voltageAt RTI(2)±25 ±55μV
At RTI, TA = –40°C to +125°C±0.08±0.2μV/°C
VOSO Output stage offset voltageAt RTI±60±170μV
At RTI, TA = –40°C to +125°C±0.2±0.35μV/°C
VOS Offset voltageAt RTI±25 ±60 / G±55 ±170 / GμV
At RTI, TA = –40°C to +125°C±0.2 ±0.35 / GμV/°C
Long-term stability1(2) µV
Turn-on time to specified VOSI See the Typical Characteristics
zidDifferential input impedance100 || 6GΩ || pF
zicCommon-mode input impedance100 || 9.5
VCM Common-mode voltage rangeVO = 0 V, the input signal common-mode range can be calculated with this tool(V–) (V+) – 1.5V
CMRRCommon-mode rejection ratioG = 1, at dc to 60 Hz, VCM = (V–) + 1.0 V to
(V+) – 2.5 V
8090dB
G = 10, at dc to 60 Hz, VCM = (V–) + 1.0 V to
(V+) – 2.5 V
94110
G = 100, at dc to 60 Hz, VCM = (V–) + 1.0 V to (V+) – 2.5 V102120
G = 1000, at dc to 60 Hz, VCM = (V–) + 1.0 V to (V+) – 2.5 V102120
INPUT BIAS CURRENT
IIBInput bias current ±850±2500pA
TA = –40°C to +125°CSee Figure 10pA/°C
IOS Input offset current ±850±2500pA
TA = –40°C to +125°CSee Figure 11pA/°C
INPUT VOLTAGE NOISE
eNI Input voltage noisef = 1 kHz, G = 100, RS = 0 Ω12.5nV/√Hz
f = 0.1 Hz to 10 Hz, G = 100, RS = 0 Ω0.25μVPP
eNO Output voltage noisef = 1 kHz, G = 100, RS = 0 Ω118nV/√Hz
f = 0.1 Hz to 10 Hz, G = 100, RS = 0 Ω2.5μVPP
iN Input current noisef = 1 kHz430fA/√Hz
f = 0.1 Hz to 10 Hz10pAPP
GAIN
GGain equation1 + (50 kΩ / RG)V/V
Gain range11000V/V
EGGain errorG = 1, (V–) + 0.5 V ≤ VO ≤ (V+) – 1.5 V±0.007%±0.05%
G = 10, (V–) + 0.5 V ≤ VO ≤ (V+) – 1.5 V±0.07%±0.2%
G = 100, (V–) + 0.5 V ≤ VO ≤ (V+) – 1.5 V±0.07%±0.2%
G = 1000, (V–) + 0.5 V ≤ VO ≤ (V+) – 1.5 V±0.25%±0.5%
Gain versus temperatureG = 1, TA = –40°C to +125°C15ppm/°C
G > 1(3), TA = –40°C to +125°C1550
Gain nonlinearityG = 1, VO = (V–) + 0.5 V ≤ VO ≤ (V+) – 1.5 V38ppm
OUTPUT
Output voltage swing from rail(5) RL = 10 kΩ220250mV
Capacitive load drive1nF
ISC Short-circuit current Continuous to common±18mA
FREQUENCY RESPONSE
BWBandwidth, –3 dBG = 1600kHz
G = 1095
G = 10015
G = 10001.5
SRSlew rateG = 1, VS = 5 V, VO = 4-V step0.9V/μs
G = 100, VS = 5 V, VO = 4-V step0.17
tS Settling timeTo 0.1%G = 1, VS = 5 V, VSTEP = 4 V50μs
G = 100, VS = 5 V, VSTEP = 4 V400
To 0.01%G = 1, VS = 5 V, VSTEP = 4 V60μs
G = 100, VS = 5 V, VSTEP = 4 V500
Overload recovery50% overdrive75μs
REFERENCE INPUT
RIN Input impedance40
Voltage rangeV–V+V
POWER SUPPLY
Voltage range Single436V
Dual±2±18
IQ Quiescent current VIN = VS / 21.41.6mA
TA = –40°C to +125°C1.8
TEMPERATURE RANGE
Specified temperature range–40125°C
Operating temperature range–55150°C
(1) Total VOS, referred-to-input = (VOSI) + (VOSO / G).
(2) 300-hour life test at 150°C demonstrated randomly distributed variation of approximately 1 μV.
(3) Does not include effects of external resistor RG.

6.7 Typical Characteristics

At TA = 25°C, VS = ±15 V, RL = 10 kΩ, VREF = midsupply, and G = 1, unless otherwise noted.
INA188 D005_SBS0632.gif
Figure 1. Input Voltage Offset Distribution
INA188 D006_SBS0632.gif
Figure 3. Output Voltage Offset Distribution
INA188 D846_SBOS632.gif
Figure 5. Input Bias Current Distribution
INA188 D848_SBOS632.gif
G = 1
Figure 7. CMRR Distribution
INA188 D107_SBOS632.gif
Figure 9. Input Bias Current vs Common-Mode Voltage
INA188 D121_SBOS632.gif
Figure 11. Input Offset Current vs Temperature
INA188 D126_SBOS632.gif
At RTI
Figure 13. Positive PSRR vs Frequency
INA188 D131_SBOS632.gif
At RTI
Figure 15. Gain vs Frequency
INA188 D134_SBOS632.gif
At RTI, 1-kΩ Source Imbalance
Figure 17. CMRR vs Frequency
INA188 D201_SBOS632.gif
VS = ±18 V
Figure 19. Positive Output Voltage Swing vs
Output Current
INA188 D203_SBOS632.gif
VS = ±2 V
Figure 21. Positive Output Voltage Swing vs
Output Current
INA188 D205_SBOS632.gif
Figure 23. Voltage Noise Spectral Density vs Frequency
INA188 D736_SBOS632.gif
G = 1000
Figure 25. 0.1-Hz to 10-Hz RTI Voltage Noise
INA188 D738_SBOS632.gif
Figure 27. 0.1-Hz to 10-Hz RTI Current Noise
INA188 D211_SBOS632.gif
RL = 10 kΩ, CL = 100 pF, G = 1
Figure 29. Large-Signal Pulse Response
INA188 D213_SBOS632.gif
RL = 10 kΩ, CL = 100 pF, G = 100
Figure 31. Large-Signal Pulse Response
INA188 D215_SBOS632.gif
RL = 10 kΩ, CL = 100 pF, G = 1
Figure 33. Small-Signal Pulse Response
INA188 D217_SBOS632.gif
RL = 10 kΩ, CL = 100 pF, G = 100
Figure 35. Small-Signal Pulse Response
INA188 D219_SBOS632.gif
G = 1
Figure 37. Small-Signal Response vs Capacitive Load
INA188 D223_SBOS632.gif
Figure 39. Supply Current vs Temperature
INA188 tc_oloop_iout-frq_bos642.gif
Figure 41. Open-Loop Output Impedance
INA188 D430_SBOS632.gif
G = 10
Figure 43. Gain Nonlinearity
INA188 D429_SBOS632.gif
G = 1000
Figure 45. Gain Nonlinearity
INA188 D844_SBOS632.gif
–40°C to +125°C
Figure 2. Input Voltage Offset Drift Distribution
INA188 D845_SBOS632.gif
–40°C to +125°C
Figure 4. Output Voltage Offset Drift Distribution
INA188 D847_SBOS632.gif
Figure 6. Input Offset Current Distribution
INA188 D849_SBOS632.gif
G = 100
Figure 8. CMRR Distribution
INA188 D109_SBOS632.gif
Figure 10. Input Bias Current vs Temperature
INA188 D122_SBOS632.gif
Figure 12. Change in Input Offset Voltage vs Warm-Up Time
INA188 D125_SBOS632.gif
Figure 14. Negative PSRR vs Frequency
INA188 D132_SBOS632.gif
At RTI
Figure 16. CMRR vs Frequency
INA188 D856_SBOS632.gif
Figure 18. Common-Mode Rejection Ratio vs Temperature
INA188 D202_SBOS632.gif
VS = ±18 V
Figure 20. Negative Output Voltage Swing vs
Output Current
INA188 D204_SBOS632.gif
VS = ±2 V
Figure 22. Negative Output Voltage Swing vs
Output Current
INA188 D735_SBOS632.gif
G = 1
Figure 24. 0.1-Hz to 10-Hz RTI Voltage Noise
INA188 D737_SBOS632.gif
Figure 26. Current Noise Spectral Density vs Frequency
INA188 D210_SBOS632.gif
Figure 28. Large-Signal Response vs Frequency
INA188 D212_SBOS632.gif
RL = 10 kΩ, CL = 100 pF, G = 10
Figure 30. Large-Signal Pulse Response
INA188 D214_SBOS632.gif
RL = 10 kΩ, CL = 100 pF, G = 1000
Figure 32. Large-Signal Pulse Response
INA188 D216_SBOS632.gif
RL = 10 kΩ, CL = 100 pF, G = 10
Figure 34. Small-Signal Pulse Response
INA188 D218_SBOS632.gif
RL = 10 kΩ, CL = 100 pF, G = 1000
Figure 36. Small-Signal Pulse Response
INA188 D739_SBOS632.gif
Figure 38. Total Harmonic Distortion + Noise vs Frequency
INA188 D224_SBOS632.gif
Figure 40. Supply Current vs Supply Voltage
INA188 D428_SBOS632.gif
G = 1
Figure 42. Gain Nonlinearity
INA188 D431_SBOS632.gif
G = 100
Figure 44. Gain Nonlinearity
INA188 D225_SBOS632.gif
Figure 46. EMIRR