SBOS445C July  2008  – December 2015 INA333

PRODUCTION DATA. 

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1Absolute Maximum Ratings
    2. 6.2ESD Ratings
    3. 6.3Recommended Operating Conditions
    4. 6.4Thermal Information
    5. 6.5Electrical Characteristics
    6. 6.6Typical Characteristics
  7. Detailed Description
    1. 7.1Overview
    2. 7.2Functional Block Diagram
    3. 7.3Feature Description
    4. 7.4Device Functional Modes
      1. 7.4.1Internal Offset Correction
      2. 7.4.2Input Common-Mode Range
  8. Application and Implementation
    1. 8.1Application Information
    2. 8.2Typical Application
      1. 8.2.1Design Requirements
      2. 8.2.2Detailed Design Procedure
        1. 8.2.2.1 Setting the Gain
        2. 8.2.2.2 Internal Offset Correction
        3. 8.2.2.3 Offset Trimming
        4. 8.2.2.4 Noise Performance
        5. 8.2.2.5 Input Bias Current Return Path
        6. 8.2.2.6 Input Common-Mode Range
        7. 8.2.2.7 Operating Voltage
        8. 8.2.2.8 Low Voltage Operation
        9. 8.2.2.9 Single-Supply Operation
        10. 8.2.2.10Input Protection
      3. 8.2.3Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1Layout Guidelines
    2. 10.2Layout Example
  11. 11Device and Documentation Support
    1. 11.1Device Support
      1. 11.1.1Development Support
        1. 11.1.1.1TINA-TI (Free Download Software)
    2. 11.2Documentation Support
      1. 11.2.1Related Documentation
    3. 11.3Trademarks
    4. 11.4Electrostatic Discharge Caution
    5. 11.5Glossary
  12. 12Mechanical, Packaging, and Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MINMAXUNIT
Supply voltage7V
Analog input voltage(2) (V–) – 0.3(V+) + 0.3V
Output short-circuit(3) Continuous
Operating temperature, TA –40150°C
Junction temperature, TJ 150°C
Storage temperature, Tstg –65150°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Input pins are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3 V beyond the supply rails should be current limited to 10 mA or less.
(3) Short-circuit to ground.

6.2 ESD Ratings

VALUEUNIT
V(ESD)Electrostatic dischargeHuman-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)±4000V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)±1000
Machine model (MM)±200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MINMAXUNIT
VSSupply voltage1.85.5V
Specified temperature–40125°C

6.4 Thermal Information

THERMAL METRIC(1)INA333UNIT
DGK (VSSOP)DRG (WSON)
8 PINS8 PINS
RθJAJunction-to-ambient thermal resistance 169.560°C/W
RθJC(top)Junction-to-case (top) thermal resistance 62.760°C/W
RθJBJunction-to-board thermal resistance 90.350°C/W
ψJTJunction-to-top characterization parameter 7.6°C/W
ψJBJunction-to-board characterization parameter 88.7°C/W
RθJC(bot)Junction-to-case (bottom) thermal resistance 6°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

for VS = 1.8 V to 5.5 V at TA = 25°C, RL = 10 kΩ, VREF = VS / 2, and G = 1 (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
INPUT(1)
VOSI Offset voltage, RTI(2) ±10 ±25/G±25 ±75/GμV
PSRvs temperatureTA = –40°C to +125°C±0.1 ±0.5 / GμV/°C
vs power supply1.8 V ≤ VS ≤ 5.5 V±1 ±5/G±5 ±15/GμV/V
Long-term stabilitySee (3)
Turnon time to specified VOSI TA = –40°C to +125°CSee Typical Characteristics
Impedance
ZINDifferential100 || 3GΩ || pF
ZINCommon-mode100 || 3GΩ || pF
VCMCommon-mode voltage rangeVO = 0 V(V–) + 0.1(V+) – 0.1V
CMRCommon-mode rejectionDC to 60 Hz
G = 1VCM = (V–) + 0.1 V
to (V+) – 0.1 V
8090dB
G = 10VCM = (V–) + 0.1 V
to (V+) – 0.1 V
100110dB
G = 100VCM = (V–) + 0.1 V
to (V+) – 0.1 V
100115dB
G = 1000VCM = (V–) + 0.1 V
to (V+) – 0.1 V
100115dB
INPUT BIAS CURRENT
IBInput bias current±70±200pA
vs temperatureTA = –40°C to +125°CSee Figure 26pA/°C
IOSInput offset current±50±200pA
vs temperatureTA = –40°C to +125°CSee Figure 28pA/°C
INPUT VOLTAGE NOISE
eNIInput voltage noiseG = 100, RS = 0 Ω, f = 10 Hz50nV/√Hz
G = 100, RS = 0 Ω, f = 100 Hz50nV/√Hz
G = 100, RS = 0 Ω, f = 1 kHz50nV/√Hz
G = 100, RS = 0 Ω, f = 0.1 Hz to 10 Hz1μVPP
iNInput current noisef = 10 Hz100fA/√Hz
f = 0.1 Hz to 10 Hz2pAPP
GAIN
GGain equation1 + (100 kΩ/RG)V/V
Range of gain11000V/V
Gain errorVS = 5.5 V, (V–) + 100 mV
≤ VO ≤ (V+) – 100 mV
G = 1±0.01%±0.1%
G = 10±0.05%±0.25%
G = 100±0.07%±0.25%
G = 1000±0.25%±0.5%
Gain vs temperature, G = 1TA = –40°C to +125°C±1±5ppm/°C
Gain vs temperature, G > 1(4) TA = –40°C to +125°C±15±50ppm/°C
Gain nonlinearityVS = 5.5 V, (V–) + 100 mV
≤ VO ≤ (V+) – 100 mV
Gain nonlinearity, G = 1 to 1000RL = 10 kΩ10ppm
OUTPUT
Output voltage swing from railVS = 5.5 V, RL = 10 kΩSee Figure 29 50mV
Capacitive load drive500pF
ISCShort-circuit currentContinuous to common–40, +5mA
FREQUENCY RESPONSE
Bandwidth, –3dBG = 1150kHz
G = 1035kHz
G = 1003.5kHz
G = 1000350Hz
SRSlew rateVS = 5 V, VO = 4-V step, G = 10.16V/μs
VS = 5 V, VO = 4-V step, G = 1000.05V/μs
tSSettling time to 0.01%VSTEP = 4 V, G = 150μs
VSTEP = 4 V, G = 100400μs
tSSettling time to 0.001%VSTEP = 4 V, G = 160μs
VSTEP = 4 V, G = 100500μs
Overload recovery50% overdrive75μs
REFERENCE INPUT
RIN 300
Voltage rangeV–V+V
POWER SUPPLY
Voltage range Single voltage range+1.8+5.5V
Dual voltage range±0.9±2.75V
IQQuiescent currentVIN = VS / 25075μA
vs temperatureTA = –40°C to +125°C80μA
TEMPERATURE RANGE
Specified temperature range–40125°C
Operating temperature range–40150°C
(1) Total VOS, referred-to-input = (VOSI) + (VOSO / G)
(2) RTI = Referred-to-input
(3) 300-hour life test at 150°C demonstrated randomly distributed variation of approximately 1 μV
(4) Does not include effects of external resistor RG

6.6 Typical Characteristics

at TA = 25°C, VS = 5 V, RL = 10 kΩ, VREF = midsupply, and G = 1 (unless otherwise noted)
INA333 tc_histo_in_vo_bos445.gif
Figure 1. Input Offset Voltage
INA333 tc_histo_out_off_bos445.gif
Figure 3. Output Offset Voltage
INA333 tc_vos-vcm_bos445.gif
Figure 5. Offset Voltage vs Common-Mode Voltage
INA333 tc_noise_100g_bos445.gif
Figure 7. 0.1-Hz to 10-Hz Noise
INA333 tc_inl_err_bos445.gif
Figure 9. Nonlinearity Error
INA333 tc_lg_resp_100g_bos445.gif
Figure 11. Large-Signal Step Response
INA333 tc_sm_resp_100g_bos445.gif
Figure 13. Small-Signal Step Response
INA333 tc_startup_tset_bos445.gif
Figure 15. Start-Up Settling Time
INA333 tc_histo_cmrr_1g_bos445.gif
Figure 17. Common-Mode Rejection Ratio
INA333 tc_cmrr-frq_bos445.gif
Figure 19. Common-Mode Rejection Ratio vs Frequency
INA333 tc_typ_cmr-vo_tri_bos445.gif
Figure 21. Typical Common-Mode Range vs Output Voltage
INA333 tc_typ_cmr-vo_tri_1p8_bos445.gif
Figure 23. Typical Common-Mode Range vs Output Voltage
INA333 tc_neg_psrr-frq_bos445.gif
Figure 25. Negative Power-Supply Rejection Ratio
INA333 tc_in_ib-vcm_bos445.gif
Figure 27. Input Bias Current vs Common-Mode Voltage
INA333 tc_vo_swing-io_bos445.gif
Figure 29. Output Voltage Swing vs Output Current
INA333 tc_iq-vcm_bos445.gif
Figure 31. Quiescent Current vs Common-Mode Voltage
INA333 tc_histo_in_vo_drift_bos445.gif
Figure 2. Input Voltage Offset Drift (–40°C to 125°C)
INA333 tc_histo_out_vo_drift_bos445.gif
Figure 4. Output Voltage Offset Drift (–40°C to 125°C)
INA333 tc_noise_1g_bos445.gif
Figure 6. 0.1-Hz to 10-Hz Noise
INA333 tc_noise_spec_bos445.gif
Figure 8. Spectral Noise Density
INA333 tc_lg_resp_1g_bos445.gif
Figure 10. Large Signal Response
INA333 tc_sm_resp_1g_bos445.gif
Figure 12. Small-Signal Step Response
INA333 tc_tset-g_bos445.gif
Figure 14. Settling Time vs Gain
INA333 tc_g-frq_bos445.gif
Figure 16. Gain vs Frequency
INA333 tc_cmrr-tmp_bos445.gif
Figure 18. Common-Mode Rejection Ratio vs Temperature
INA333 tc_typ_cmr-vo_oct_bos445.gif
Figure 20. Typical Common-Mode Range vs Output Voltage
INA333 tc_typ_cmr-vo_oct_0p9_bos445.gif
Figure 22. Typical Common-Mode Range vs Output Voltage
INA333 tc_pos_psrr-frq_bos445.gif
Figure 24. Positive Power-Supply Rejection Ratio
INA333 tc_in_ib-tmp_bos445.gif
Figure 26. Input Bias Current vs Temperature
INA333 tc_in_ios-tmp_bos445.gif
Figure 28. Input Offset Current vs Temperature
INA333 tc_iq-tmp_bos445.gif
Figure 30. Quiescent Current vs Temperature