SBOS562F August 2011  – July 2016 INA826

PRODUCTION DATA. 

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1Absolute Maximum Ratings
    2. 7.2ESD Ratings
    3. 7.3Recommended Operating Conditions
    4. 7.4Thermal Information
    5. 7.5Electrical Characteristics
    6. 7.6Typical Characteristics
  8. Detailed Description
    1. 8.1Overview
    2. 8.2Functional Block Diagram
    3. 8.3Feature Description
      1. 8.3.1 Inside the INA826
      2. 8.3.2 Setting the Gain
        1. 8.3.2.1Gain Drift
      3. 8.3.3 Offset Trimming
      4. 8.3.4 Input Common-Mode Range
      5. 8.3.5 Input Protection
      6. 8.3.6 Input Bias Current Return Path
      7. 8.3.7 Reference Terminal
      8. 8.3.8 Dynamic Performance
      9. 8.3.9 Operating Voltage
        1. 8.3.9.1Low-Voltage Operation
      10. 8.3.10Error Sources
    4. 8.4Device Functional Modes
  9. Application and Implementation
    1. 9.1Application Information
    2. 9.2Typical Application
      1. 9.2.1Design Requirements
      2. 9.2.2Detailed Design Procedure
      3. 9.2.3Application Curves
    3. 9.3System Examples
      1. 9.3.1Circuit Breaker
      2. 9.3.2Programmable Logic Controller (PLC) Input
      3. 9.3.3Using TINA-TI SPICE-Based Analog Simulation Program with the INA826
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1Layout Guidelines
      1. 11.1.1CMRR vs Frequency
    2. 11.2Layout Example
  12. 12Device and Documentation Support
    1. 12.1Documentation Support
      1. 12.1.1Related Documentation
    2. 12.2Receiving Notification of Documentation Updates
    3. 12.3Community Resources
    4. 12.4Trademarks
    5. 12.5Electrostatic Discharge Caution
    6. 12.6Glossary
  13. 13Mechanical, Packaging, and Orderable Information

12 Device and Documentation Support

12.2 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.

12.3 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

12.4 Trademarks

E2E is a trademark of Texas Instruments.

PhotoMOS is a registered trademark of Panasonic Electric Works Europe AG.

All other trademarks are the property of their respective owners.

12.5 Electrostatic Discharge Caution

esds-image

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

12.6 Glossary

SLYZ022TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.