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LF356-MIL

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Military-grade, single, 30-V, 5-MHz, FET-input operational amplifier

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Data sheet

LF356-MIL

ACTIVE
Data sheet Order now

Product details

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 10 Rail-to-rail In to V+ GBW (typ) (MHz) 5 Slew rate (typ) (V/µs) 12 Vos (offset voltage at 25°C) (max) (mV) 2 Iq per channel (typ) (mA) 5 Vn at 1 kHz (typ) (nV√Hz) 12 Rating Military Operating temperature range (°C) -40 to 85 Offset drift (typ) (µV/°C) 3 CMRR (typ) (dB) 100 Iout (typ) (A) 0.025 Architecture FET
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 10 Rail-to-rail In to V+ GBW (typ) (MHz) 5 Slew rate (typ) (V/µs) 12 Vos (offset voltage at 25°C) (max) (mV) 2 Iq per channel (typ) (mA) 5 Vn at 1 kHz (typ) (nV√Hz) 12 Rating Military Operating temperature range (°C) -40 to 85 Offset drift (typ) (µV/°C) 3 CMRR (typ) (dB) 100 Iout (typ) (A) 0.025 Architecture FET
TO-CAN (LMC) 8 80.2816 mm² 8.96 x 8.96 WAFERSALE (YS) — See data sheet
  • Advantages
    • Replace Expensive Hybrid and Module FET Op Amps
    • Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices
    • Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner
    • Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers
    • New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems
    • Internal Compensation and Large Differential Input Voltage Capability
  • Common Features
    • Low Input Bias Current: 30 pA
    • Low Input Offset Current: 3 pA
    • High Input Impedance: 1012 Ω
    • Low Input Noise Current: 0.01 pA/√Hz
    • High Common-Mode Rejection Ratio: 100 dB
    • Large DC Voltage Gain: 106 dB
  • Uncommon Features
    • Extremely Fast Settling Time to 0.01%: 1.5 µs
    • Fast Slew Rate: 12 V/µs
    • Wide Gain Bandwidth: 5 MHz
    • Low Input Noise Voltage: 12 nV/√Hz
  • Advantages
    • Replace Expensive Hybrid and Module FET Op Amps
    • Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices
    • Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner
    • Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers
    • New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems
    • Internal Compensation and Large Differential Input Voltage Capability
  • Common Features
    • Low Input Bias Current: 30 pA
    • Low Input Offset Current: 3 pA
    • High Input Impedance: 1012 Ω
    • Low Input Noise Current: 0.01 pA/√Hz
    • High Common-Mode Rejection Ratio: 100 dB
    • Large DC Voltage Gain: 106 dB
  • Uncommon Features
    • Extremely Fast Settling Time to 0.01%: 1.5 µs
    • Fast Slew Rate: 12 V/µs
    • Wide Gain Bandwidth: 5 MHz
    • Low Input Noise Voltage: 12 nV/√Hz

The LF356-MIL device are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

The LF356-MIL device are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
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Technical documentation

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Type Title Date
* Data sheet LF356-MIL JFET Input Operational Amplifier datasheet PDF | HTML 21 Jun 2017
E-book The Signal e-book: A compendium of blog posts on op amp design topics 28 Mar 2017
Application note AN-272 Op Amp Booster Designs (Rev. B) 23 Apr 2013
Application note AN-311 Theory and Applications of Logarithmic Amplifiers (Rev. B) 23 Apr 2013
Application note Applications of the LM3524 Pulse Width Modulator (Rev. B) 23 Apr 2013
Application note AN-263 Sine Wave Generation Techniques (Rev. C) 22 Apr 2013
Application note Effect of Heavy Loads on Accuracy and Linearity of Op Amp Circuits (Rev. B) 22 Apr 2013
Application note AN-480 A 40 MHz Programmable Video Op Amp 11 May 2004
Application note Data Acq Using ADC0816 & ADC0817 8-Bit ADC w/On-Chip 16 Chan Multiplexr 10 May 2004
Application note AN-293 Control Applications of CMOS DACs 10 May 2004
Application note AN-253 LH0024 and LH0032 High Speed Op Amp Applications 02 May 2004
Application note AN-275 CMOS D/A Converters Match Most Microprocessors 02 May 2004
Application note AN-447 Protection Schemes for BI-FET Amplifiers and Switches 02 May 2004
Application note Get Fast Stable Response From Improved Unity-Gain Followers 02 Oct 2002

Design & development

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LF356 PSPICE Model

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WAFERSALE (YS) —
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