SNOSD55 June   2017 LF356-MIL

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 AC Electrical Characteristics, TA = TJ = 25°C, VS = ±15 V
    6. 6.6 DC Electrical Characteristics, TA = TJ = 25°C, VS = ±15 V
    7. 6.7 DC Electrical Characteristics
    8. 6.8 Power Dissipation Ratings
    9. 6.9 Typical Characteristics
      1. 6.9.1 Typical AC Performance Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Large Differential Input Voltage
      2. 7.3.2 Large Common-Mode Input Voltage
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 System Examples
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Printed-Circuit-Board Layout For High-Impedance Work
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Advantages
    • Replace Expensive Hybrid and Module FET Op Amps
    • Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices
    • Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner
    • Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers
    • New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems
    • Internal Compensation and Large Differential Input Voltage Capability
  • Common Features
    • Low Input Bias Current: 30 pA
    • Low Input Offset Current: 3 pA
    • High Input Impedance: 1012 Ω
    • Low Input Noise Current: 0.01 pA/√Hz
    • High Common-Mode Rejection Ratio: 100 dB
    • Large DC Voltage Gain: 106 dB
  • Uncommon Features
    • Extremely Fast Settling Time to 0.01%: 1.5 μs
    • Fast Slew Rate: 12 V/µs
    • Wide Gain Bandwidth: 5 MHz
    • Low Input Noise Voltage: 12 nV/√Hz

2 Applications

  • Precision High-Speed Integrators
  • Fast D/A and A/D Converters
  • High Impedance Buffers
  • Wideband, Low Noise, Low Drift Amplifiers
  • Logarithmic Amplifiers
  • Photocell Amplifiers
  • Sample and Hold Circuits

3 Description

The LF356-MIL device are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
LF356-MIL SOIC (8) 4.90 mm × 3.91 mm
TO-CAN (8) 9.08 mm × 9.08 mm
PDIP (8) 9.81 mm × 6.35 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Simplified Schematic

LF356-MIL 00564601.png
3 pF in LF357 series

4 Revision History

DATE REVISION NOTES
June 2017 * Initial release.