LF356

(ACTIVE) JFET Input Operational Amplifiers

Diagrams

Functional diagram

Typical Application

Typical Performance

Description

The LFx5x devices are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

Features

  • Advantages
    • Replace Expensive Hybrid and Module FET
      Op Amps
    • Rugged JFETs Allow Blow-Out Free Handling
      Compared With MOSFET Input Devices
    • Excellent for Low Noise Applications Using
      Either High or Low Source Impedance–Very
      Low 1/f Corner
    • Offset Adjust Does Not Degrade Drift or
      Common-Mode Rejection as in Most
      Monolithic Amplifiers
    • New Output Stage Allows Use of Large
      Capacitive Loads (5,000 pF) Without Stability
      Problems
    • Internal Compensation and Large Differential
      Input Voltage Capability
  • Common Features
    • Low Input Bias Current: 30 pA
    • Low Input Offset Current: 3 pA
    • High Input Impedance: 1012 Ω
    • Low Input Noise Current: 0.01 pA/√Hz
    • High Common-Mode Rejection Ratio: 100 dB
    • Large DC Voltage Gain: 106 dB
  • Uncommon Features
    • Extremely Fast Settling Time to 0.01%:
      • 4 µs for the LFx55 devices
      • 1.5 µs for the LFx56
      • 1.5 µs for the LFx57 (AV = 5)
    • Fast Slew Rate:
      • 5 V/µs for the LFx55
      • 12 V/µs for the LFx56
      • 50 V/µs for the LFx57 (AV = 5)
    • Wide Gain Bandwidth:
      • 2.5 MHz for the LFx55 devices
      • 5 MHz for the LFx56
      • 20 MHz for the LFx57 (AV = 5)
    • Low Input Noise Voltage:
      • 20 nV/√Hz for the LFx55
      • 12 nV/√Hz for the LFx56
      • 12 nV/√Hz for the LFx57 (AV = 5)

Parametrics

Number of Channels (#) 1   
Total Supply Voltage (Min) (+5V=5, +/-5V=10) 10   
Total Supply Voltage (Max) (+5V=5, +/-5V=10) 36   
GBW (Typ) (MHz) 5   
Slew Rate (Typ) (V/us) 12   
Rail-to-Rail In to V+   
Vos (Offset Voltage @ 25C) (Max) (mV) 2   
Iq per channel (Typ) (mA) 5   
Vn at 1kHz (Typ) (nV/rtHz) 12   
Rating Catalog   
Operating Temperature Range (C) 0 to 70   
Package Group PDIP^SOIC   
Package Size: mm2:W x L (PKG) See datasheet (PDIP)^8SOIC: 29 mm2: 6 x 4.9(SOIC)   
Offset Drift (Typ) (uV/C) 3   
Features N/A   
Input Bias Current (Max) (pA) 8000   
CMRR (Typ) (dB) 100   
Output Current (Typ) (mA) 25   
Architecture FET   

Companion Products

Technical Documents

Datasheet (1)

Application notes (12)

Solution guides (1)

More literature (1)

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