LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability | TI.com

LM5110 (ACTIVE) Dual 5A Compound Gate Driver with Negative Output Voltage Capability

 

Recommended alternative parts

  • LM5111  -  Dual 5A Low Side Gate Driver
  • LM5112  -  Single 7A Low Side Compound Gate Driver
  • LM5112-Q1  -  Single 7A Low Side Compound Gate Driver

Description

The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally-enhanced WSON-10 packages.

Features

  • Independently Drives Two N-Channel MOSFETs
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 5A sink/3A Source Current Capability
  • Two Channels can be Connected in Parallel to Double the Drive Current
  • Independent Inputs (TTL Compatible)
  • Fast Propagation Times (25-ns Typical)
  • Fast Rise and Fall Times (14-ns/12-ns Rise/Fall With 2-nF Load)
  • Dedicated Input Ground Pin (IN_REF) for Split Supply or Single Supply Operation
  • Outputs Swing from VCC to VEE Which Can Be Negative Relative to Input Ground
  • Available in Dual Noninverting, Dual Inverting and Combination Configurations
  • Shutdown Input Provides Low Power Mode
  • Supply Rail Undervoltage Lockout Protection
  • Pin-Out Compatible With Industry Standard Gate Drivers
  • Packages:
    • SOIC-8
    • WSON-10 (4 mm × 4 mm)

Parametrics

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Part number Order Number of channels (#) Power switch Peak output current (A) Input VCC (Min) (V) Input VCC (Max) (V) Rise time (ns) Fall time (ns) Prop delay (ns) Input threshold Channel input logic Input negative voltage (V) Features Rating Operating temperature range (C) Package Group
LM5110 Order now 2     MOSFET     5     3.5     14     14     12     25     TTL     Inverting
Non-Inverting
Combination    
0     Negative Output Voltage Capability       -40 to 125     SOIC | 8
WSON | 10    
LM5111 Order now 2     MOSFET     5     3.5     14     14     12     25     TTL     Inverting
Non-Inverting
Combination    
0     UVLO Configured to Drive PFET through OUT_A       -40 to 125     MSOP-PowerPAD | 8
SOIC | 8    
LM5112 Order now 1     MOSFET     7     3.5     14     14     12     25     TTL     Inverting
Non-Inverting    
0     Negative Output Voltage Capability       -40 to 125     MSOP-PowerPAD | 8
WSON | 6    
LM5112-Q1 Order now 1     MOSFET     7     3.5     14     14     12     25     TTL     Inverting
Non-Inverting    
0     Negative Output Voltage Capability     Automotive     -40 to 125     WSON | 6