The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
| Type | Title | Date | ||
|---|---|---|---|---|
| * | Data sheet | LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver datasheet (Rev. C) | PDF | HTML | 22 Oct 2015 |
| Application brief | External Gate Resistor Selection Guide (Rev. A) | 28 Feb 2020 | ||
| Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 28 Feb 2020 | ||
| More literature | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 29 Oct 2018 | ||
| Application note | An Alternative Approach to Higher-Power Boost Converters | 30 Nov 2009 |
For additional terms or required resources, click any title below to view the detail page where available.
| Package | Pins | Download |
|---|---|---|
| WSON (NGG) | 6 | View options |
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