LMG1210 200V, 1.5A/3A Half Bridge GaN Driver With Adjustable Dead-time | TI.com

LMG1210 (PREVIEW)

200V, 1.5A/3A Half Bridge GaN Driver With Adjustable Dead-time

 

Sample Availability

Experimental samples are available (XLMG1210RVRT). Request now

Description

The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, high-efficiency applications that features adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system efficiency. This part also features an internal LDO which ensures a gate-drive voltage of 5-V regardless of supply voltage.

To enable best performance in a variety of applications, the LMG1210 allows the designer to choose the optimal bootstrap diode to charge the high-side bootstrap capacitor. An internal switch turns the bootstrap diode off when the low side is off, effectively preventing the high-side bootstrap from overcharging and minimizing the reverse recovery charge. Additional parasitic capacitance across the GaN FET is minimized to less than 1 pF to reduce additional switching losses.

The GaN driver can operate in two different modes: Independent Input Mode (IIM) and PWM mode. In IIM each of the outputs is independently controlled by a dedicated input. In PWM mode the two complementary output signals are generated from a single input and the user can adjust the dead time from 0 to 20 ns for each edge. The LMG1210 operates over a wide temperature range from –40°C to 125°C and is offered in a low-inductance WQFN package.

Features

  • Up to 50 MHz Operation
  • 10 ns Typical Propagation Delay
  • 3.4 ns High-Side to Low-Side Matching
  • Minimum Pulse Width of 4 ns
  • Two Control Input Options
    • Single PWM Input with Adjustable Dead Time
    • Independent Input Mode
  • 1.5-A Peak Source and 3-A Peak Sink Currents
  • External Bootstrap Diode For Flexibility
  • Internal LDO for adaptability to voltage rails
  • High 300V/ns CMTI
  • HO to LO Capacitance Less Than 1 pF
  • UVLO and Overtemperature Protection
  • Low-Inductance WQFN Package

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Parametrics Compare all products in Half-bridge drivers

 
Number of channels (#)
Power switch
Peak output current (A)
Input VCC (Min) (V)
Input VCC (Max) (V)
Rise time (ns)
Fall time (ns)
Prop delay (ns)
Input threshold
Features
Rating
Operating temperature range (C)
Package Group
LMG1210 LM5113-Q1 LMG1020 LMG1205
2     2     1     2    
MOSFET
GaNFET    
MOSFET
GaNFET    
MOSFET
GaNFET    
MOSFET
GaNFET    
3     5     7     5    
6     4.5     4.75     4.5    
18     5.5     5.25     5.5    
0.5     7     0.4     7    
0.5     3.5     0.4     3.5    
10     30     2.5     35    
TTL     TTL     TTL     TTL    
    low-side, ultra-fast      
Catalog     Automotive     Catalog     Catalog    
-40 to 125     -40 to 125     -40 to 125     -40 to 125    
WQFN | 19     WSON | 10     DSBGA | 6     DSBGA | 12