LMG3411R150 600-V 150mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection | TI.com

LMG3411R150 (PREVIEW) 600-V 150mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection

 

Sample availability and more information

Preproduction samples are available (XLMG3411R150RWHT). Request now

Get started with your GaN design today with the LMG3411R150 development kit:

Description

The LMG3411R150 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG3411’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

The LMG3411R150 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100V/ns switching with near zero Vds ringing, <100 ns current limiting self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.

Features

  • TI GaN process qualified through accelerated reliability in-application hard-switching mission profiles
  • Enables high density power conversion designs
    • Superior system performance over cascode or stand-alone GaN FETs
    • Low inductance 8mm x 8mm QFN package for ease of design, and layout
    • Adjustable drive strength for switching performance and EMI control
    • Digital fault status output signal
    • Only +12 V unregulated supply needed
  • Integrated gate driver
    • Zero common source inductance
    • 20 ns propagation delay for MHz operation
    • Process-tuned gate bias voltage for reliability
    • 25 to 100V/ns user adjustable slew rate
    • Cycle-by-cycle overcurrent protection
  • Robust protection
    • Requires no external protection components
    • Overcurrent protection with <100ns response
    • >150V/ns slew rate immunity
    • Transient overvoltage immunity
    • Overtemperature protection
    • UVLO protection on all supply rails

All trademarks are the property of their respective owners.

Parametrics

Compare all products in GaN FET power stages Email Download to Excel
Part number Order Approx. price (US$) Configuration ID (Max) (A)
LMG3411R150 Order now 12.99 | 1ku     Single-Channel Power Stage     6    
LMG3410R050 Order now 18.69 | 1ku     Single-Channel Power Stage     12    
LMG3410R070 Order now 14.95 | 1ku     Single-Channel Power Stage     12    
LMG3411R050 Order now 16.45 | 1ku     Single-Channel Power Stage     12    
LMG3411R070 Order now 14.95 | 1ku     Single-Channel Power Stage     12