The LMG5200 device, an 80-V, 10-A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.
GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG5200 device is available in a 6 mm × 8 mm × 2 mm lead-free package and can be easily mounted on PCBs.
The TTL logic compatible inputs can withstand input voltages up to 12 V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.
The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor. When used with the TPS53632G controller, the LMG5200 enables direct conversion from 48-V to point-of-load voltages (0.5-1.5 V).
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|Part number||Order||Prop delay (ns)||Rating||Operating temperature range (C)||Package Group||Package size: mm2:W x L (PKG)|
||29.5||Catalog||-40 to 125||QFM | 9||See datasheet (QFM)|
|LMG3410R050||Samples not available||20||Catalog||-40 to 125||VQFN | 32||32VQFN: 64 mm2: 8 x 8 (VQFN | 32)|
||20||Catalog||-40 to 125||VQFN | 32||32VQFN: 64 mm2: 8 x 8 (VQFN | 32)|