Product details

Current consumption (mA) 60 Frequency (min) (MHz) 0 Frequency (max) (MHz) 6500 Gain (typ) (dB) 12 Noise figure (typ) (dB) 9.6 OIP3 (typ) (dBm) 47.7 P1dB (typ) (dBm) 12 Number of channels 1 Operating temperature range (°C) -55 to 125 Type Active Balun, RF FDA Rating Space
Current consumption (mA) 60 Frequency (min) (MHz) 0 Frequency (max) (MHz) 6500 Gain (typ) (dB) 12 Noise figure (typ) (dB) 9.6 OIP3 (typ) (dBm) 47.7 P1dB (typ) (dBm) 12 Number of channels 1 Operating temperature range (°C) -55 to 125 Type Active Balun, RF FDA Rating Space
LCCC-FC (FFK) 14 33 mm² 6 x 5.5
  • QMLV (QML class V) MIL-PRF-38535 qualified, SMD 5962R1721401VXC
    • Radiation hardness assurance (RHA) up to 100-krad(Si) total ionizing dose (TID)
    • Single event latch-up (SEL) immune to
      LET = 85 MeV-cm2/mg
    • Qualified over the military temperature range (–55°C to 125°C)
  • Gain bandwidth product (GBP): 6.5 GHz
  • Excellent linearity performance:
    DC to 2 GHz
  • Slew rate: 17,500 V/µs
  • Low HD2, HD3 distortion
    (500 mVPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 100 MHz: HD2 at –91 dBc, HD3 at –95 dBc
    • 200 MHz: HD2 at –86 dBc, HD3 at –85 dBc
    • 500 MHz: HD2 at –80 dBc, HD3 at –80 dBc
    • 1 GHz: HD2 at –53 dBc, HD3 at –70 dBc
    • 2 GHz: HD2 at –68 dBc, HD3 at –56 dBc
  • Low IMD2, IMD3 distortion
    (1 VPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 500 MHz: IMD2 at –90 dBc, IMD3 at –79 dBc
    • 1 GHz: IMD2 at –80 dBc, IMD3 at –61 dBc
    • 2 GHz: IMD2 at –64 dBc, IMD3 at –42 dBc
  • High OIP2, OIP3. Gp = 8 dB(1)
    • 500 MHz: OIP2 at 91 dBm, OIP3 at 47.7 dBm
    • 1 GHz: OIP2 at 80 dBm, OIP3 at 37.5 dBm
  • Input voltage noise: 1.25 nV/√Hz
  • Input current noise: 3.5 pA/√Hz
  • Supports single- and dual-supply operation
  • Current consumption: 60 mA
  • Power-down feature (1)

(1)Power Gain (Gp) = 8 dB; Voltage Gain (Gv) = 17 dB; RLtotal = 200 Ω. See Output Reference Nodes and Gain Nomenclature section for more details.

  • QMLV (QML class V) MIL-PRF-38535 qualified, SMD 5962R1721401VXC
    • Radiation hardness assurance (RHA) up to 100-krad(Si) total ionizing dose (TID)
    • Single event latch-up (SEL) immune to
      LET = 85 MeV-cm2/mg
    • Qualified over the military temperature range (–55°C to 125°C)
  • Gain bandwidth product (GBP): 6.5 GHz
  • Excellent linearity performance:
    DC to 2 GHz
  • Slew rate: 17,500 V/µs
  • Low HD2, HD3 distortion
    (500 mVPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 100 MHz: HD2 at –91 dBc, HD3 at –95 dBc
    • 200 MHz: HD2 at –86 dBc, HD3 at –85 dBc
    • 500 MHz: HD2 at –80 dBc, HD3 at –80 dBc
    • 1 GHz: HD2 at –53 dBc, HD3 at –70 dBc
    • 2 GHz: HD2 at –68 dBc, HD3 at –56 dBc
  • Low IMD2, IMD3 distortion
    (1 VPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 500 MHz: IMD2 at –90 dBc, IMD3 at –79 dBc
    • 1 GHz: IMD2 at –80 dBc, IMD3 at –61 dBc
    • 2 GHz: IMD2 at –64 dBc, IMD3 at –42 dBc
  • High OIP2, OIP3. Gp = 8 dB(1)
    • 500 MHz: OIP2 at 91 dBm, OIP3 at 47.7 dBm
    • 1 GHz: OIP2 at 80 dBm, OIP3 at 37.5 dBm
  • Input voltage noise: 1.25 nV/√Hz
  • Input current noise: 3.5 pA/√Hz
  • Supports single- and dual-supply operation
  • Current consumption: 60 mA
  • Power-down feature (1)

(1)Power Gain (Gp) = 8 dB; Voltage Gain (Gv) = 17 dB; RLtotal = 200 Ω. See Output Reference Nodes and Gain Nomenclature section for more details.

The LMH5401-SP is a very high-performance, radiation hardened, differential amplifier optimized for radio frequency (RF), intermediate frequency (IF), or high-speed, dc-coupled, time-domain applications. The device is ideal for dc- or ac-coupled applications that may require a single-ended-to-differential (SE-DE) conversion when driving an analog-to-digital converter (ADC). The LMH5401-SP generates very low levels of second- and third-order distortion when operating in SE-DE or differential-to-differential (DE-DE) mode.



The amplifier is optimized for use in both SE-DE and DE-DE systems. The device has unprecedented usable bandwidth from dc to 2 GHz. The LMH5401-SP can be used for SE-DE conversions in the signal chain without external baluns in a wide range of applications such as test and measurement, broadband communications, and high-speed data acquisition.

A common-mode reference input pin is provided to align the amplifier output common-mode with the ADC input requirements. Power supplies between 3.3 V and 5 V can be selected and dual-supply operation is supported when required by the application. A power-down feature is also available for power savings.

This level of performance is achieved at a very low power level of 300 mW when a 5-V supply is used. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, LCCC-14 package for higher performance.

The LMH5401-SP is a very high-performance, radiation hardened, differential amplifier optimized for radio frequency (RF), intermediate frequency (IF), or high-speed, dc-coupled, time-domain applications. The device is ideal for dc- or ac-coupled applications that may require a single-ended-to-differential (SE-DE) conversion when driving an analog-to-digital converter (ADC). The LMH5401-SP generates very low levels of second- and third-order distortion when operating in SE-DE or differential-to-differential (DE-DE) mode.



The amplifier is optimized for use in both SE-DE and DE-DE systems. The device has unprecedented usable bandwidth from dc to 2 GHz. The LMH5401-SP can be used for SE-DE conversions in the signal chain without external baluns in a wide range of applications such as test and measurement, broadband communications, and high-speed data acquisition.

A common-mode reference input pin is provided to align the amplifier output common-mode with the ADC input requirements. Power supplies between 3.3 V and 5 V can be selected and dual-supply operation is supported when required by the application. A power-down feature is also available for power savings.

This level of performance is achieved at a very low power level of 300 mW when a 5-V supply is used. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, LCCC-14 package for higher performance.

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Technical documentation

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Type Title Date
* Data sheet LMH5401-SP radiation hardened 6.5-GHz, low-noise, low-power, gain-configurable fully differential amplifier datasheet (Rev. B) PDF | HTML 28 Feb 2019
* Radiation & reliability report Single-Event Effects Test Report of the LMH5401-SP (Rev. B) 26 Nov 2018
* Radiation & reliability report LMH5401-SP (5962R1721401VXC) Neutron Displacement Damage Characterization 07 Sep 2018
* Radiation & reliability report LMH5401-SP TID Radiation Report (Rev. A) 31 Jul 2018
* SMD LMH5401-SP SMD 5962-17214 03 May 2018
More literature TI Engineering Evaluation Units vs. MIL-PRF-38535 QML Class V Processing (Rev. A) 31 Aug 2023
Application note Heavy Ion Orbital Environment Single-Event Effects Estimations (Rev. A) PDF | HTML 17 Nov 2022
Application note Single-Event Effects Confidence Interval Calculations (Rev. A) PDF | HTML 19 Oct 2022
Application brief Analog Front-End Design With Texas Instruments’ Tooling Landscape PDF | HTML 07 Mar 2022
Selection guide TI Space Products (Rev. I) 03 Mar 2022
Application note Rad-hardened FDA as Clock Buffer in Communication and Radar Payloads (Rev. A) 02 Aug 2019
E-book Radiation Handbook for Electronics (Rev. A) 21 May 2019
User guide TSW12D1620EVM-CVAL User's Guide (Rev. A) 29 Jan 2019
EVM User's guide LMH5401EVM-CVAL Evaluation Module (EVM) (Rev. A) 21 Sep 2018

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

LMH5401EVM-CVAL — LMH5401-SP Radiation Hardness Assured (RHA) Wideband Fully Differential Amplifier Evaluation Module

The LMH5401EVM-CVAL is an evaluation module for the single LMH5401FFK/EM amplifier in a 14 pin LCCC high performance RF package. This evaluation module is designed to quickly and easily demonstrate the functionality and versatility of the amplifier.

The EVM is ready to connect to power, signal (...)

User guide: PDF
Not available on TI.com
Evaluation board

TSW12D1620EVM-CVAL — ADC12D1620QML-SP evaluation module for 300-krad, 12-bit, dual 1.6-GSPS or single 3.2-GSPS ADC

The TSW12D1620EVM-CVAL is a 1.5-GHz wideband receiver evaluation module (EVM) that includes ceramic engineering models of the amplifier, analog-to-digital converter (ADC), clocking, temperature sensor, microcontroller, and power solution. The board is best suited for (...)

User guide: PDF
Not available on TI.com
Simulation model

LMH5401-SP TINA-TI Reference Design

SBOMAM1.TSC (382 KB) - TINA-TI Reference Design
Simulation model

LMH5401-SP TINA-TI Spice Model

SBOMAM0.ZIP (10 KB) - TINA-TI Spice Model
Reference designs

TIDA-010191 — Space-grade multichannel JESD204B 15-GHz clocking reference design

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Package Pins Download
LCCC-FC (FFK) 14 View options

Ordering & quality

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  • Fab location
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