LMV342-N Single w/ Shutdown/Dual/Quad Gen Purpose, 2.7V, Rail-to-Rail Output, 125C, Op Amps | TI.com

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Single w/ Shutdown/Dual/Quad Gen Purpose, 2.7V, Rail-to-Rail Output, 125C, Op Amps


Recommended alternative parts

  • LMV341-N  -  Single Channel
  • LMV652  -  Exceptional Bandwidth To Power Ratio & Small Package


The LMV34x-N devices are single, dual, and quad low-voltage, low-power operational amplifiers. They are designed specifically for low-voltage portable applications. Other important product characteristics are low input bias current, rail-to-rail output, and wide temperature range.

The patented class AB turnaround stage significantly reduces the noise at higher frequencies, power consumption, and offset voltage. The PMOS input stage provides the user with ultra-low input bias current of 20 fA (typical) and high input impedance.

The industrial-plus temperature range of –40°C to 125°C allows the LMV34x-N to accommodate a broad range of extended environment applications. LMV341-N expands Texas Instrument’s Silicon Dust amplifier portfolio offering enhancements in size, speed, and power savings. The LMV34x-N devices are specified to operate over the voltage range of 2.7 V to 5.5 V and all have rail-to-rail output.

The LMV341-N offers a shutdown pin that can be used to disable the device. Once in shutdown mode, the supply current is reduced to 45 pA (typical). The LMV34x-N devices have 29-nV voltage noise at 10 KHz, 1 MHz GBW, 1-V/µs slew rate, 0.25 mVos, and 0.1-µA shutdown current (LMV341-N).

The LMV341-N is offered in the tiny 6-pin SC70 package, the LMV342-N in space-saving 8-pin VSSOP and SOIC packages, and the LMV344-N in 14-pin TSSOP and SOIC packages. These small package amplifiers offer an ideal solution for applications requiring minimum PCB footprint. Applications with area constrained PCB requirements include portable electronics such as cellular handsets and PDAs.


  • Typical 2.7 V Supply Values (Unless Otherwise
  • Ensured 2.7 V and 5 V Specifications
  • Input Referred Voltage Noise at 10 kHz:
    29 nV/√Hz
  • Supply Current (Per Amplifier): 100 µA
  • Gain Bandwidth Product: 1 MHz
  • Slew Rate: 1 V/µs
  • Shutdown Current (LMV341-N): 45 pA
  • Turnon Time From Shutdown (LMV341-N): 5 µs
  • Input Bias Current: 20 fA


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Part number Order Number of channels (#) Total supply voltage (Min) (+5V=5, +/-5V=10) Total supply voltage (Max) (+5V=5, +/-5V=10) GBW (Typ) (MHz) Slew rate (Typ) (V/us) Rail-to-rail Vos (offset voltage @ 25 C) (Max) (mV) Iq per channel (Typ) (mA) Vn at 1 kHz (Typ) (nV/rtHz) Rating Operating temperature range (C) Package Group Package size: mm2:W x L (PKG) Offset drift (Typ) (uV/C) Features Input bias current (Max) (pA) CMRR (Typ) (dB) Output current (Typ) (mA) Architecture
LMV342-N Order now 2     2.7     5.5     1     1     In to V-
5     0.107     39     Catalog     -40 to 125     SOIC | 8
VSSOP | 8    
8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)
8VSSOP: 15 mm2: 4.9 x 3 (VSSOP | 8)    
1.9         200     86     75     CMOS    
LMV341-N Order now 1     2.7     5.5     1     1     In to V-
4     0.107     39     Catalog     -40 to 125     SC70 | 6     6SC70: 4 mm2: 2.1 x 2 (SC70 | 6)     1.9     Shutdown     200     86     75     CMOS    
LMV652 Order now 2     2.7     5.5     12     2.8     In to V-
1.5     0.11     17     Catalog     -40 to 125     VSSOP | 8     8VSSOP: 15 mm2: 4.9 x 3 (VSSOP | 8)     6.6         100000     100     15     Bipolar