LMV342-N (ACTIVE)

Single w/ Shutdown/Dual/Quad Gen Purpose, 2.7V, Rail-to-Rail Output, 125C, Op Amps

Single w/ Shutdown/Dual/Quad Gen Purpose, 2.7V, Rail-to-Rail Output, 125C, Op Amps - LMV342-N
 

Recommended alternative parts

  • LMV341-N  -  Single Channel
  • LMV652  -  Exceptional Bandwidth To Power Ratio & Small Package

Description

The LMV34x-N devices are single, dual, and quad low-voltage, low-power operational amplifiers. They are designed specifically for low-voltage portable applications. Other important product characteristics are low input bias current, rail-to-rail output, and wide temperature range.

The patented class AB turnaround stage significantly reduces the noise at higher frequencies, power consumption, and offset voltage. The PMOS input stage provides the user with ultra-low input bias current of 20 fA (typical) and high input impedance.

The industrial-plus temperature range of –40°C to 125°C allows the LMV34x-N to accommodate a broad range of extended environment applications. LMV341-N expands Texas Instrument’s Silicon Dust amplifier portfolio offering enhancements in size, speed, and power savings. The LMV34x-N devices are specified to operate over the voltage range of 2.7 V to 5.5 V and all have rail-to-rail output.

The LMV341-N offers a shutdown pin that can be used to disable the device. Once in shutdown mode, the supply current is reduced to 45 pA (typical). The LMV34x-N devices have 29-nV voltage noise at 10 KHz, 1 MHz GBW, 1-V/µs slew rate, 0.25 mVos, and 0.1-µA shutdown current (LMV341-N).

The LMV341-N is offered in the tiny 6-pin SC70 package, the LMV342-N in space-saving 8-pin VSSOP and SOIC packages, and the LMV344-N in 14-pin TSSOP and SOIC packages. These small package amplifiers offer an ideal solution for applications requiring minimum PCB footprint. Applications with area constrained PCB requirements include portable electronics such as cellular handsets and PDAs.

Features

  • Typical 2.7 V Supply Values (Unless Otherwise
    Noted)
  • Ensured 2.7 V and 5 V Specifications
  • Input Referred Voltage Noise at 10 kHz:
    29 nV/√Hz
  • Supply Current (Per Amplifier): 100 µA
  • Gain Bandwidth Product: 1 MHz
  • Slew Rate: 1 V/µs
  • Shutdown Current (LMV341-N): 45 pA
  • Turnon Time From Shutdown (LMV341-N): 5 µs
  • Input Bias Current: 20 fA

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Parametrics Compare all products in General-Purpose Op Amps

 
Number of Channels (#)
Total Supply Voltage (Min) (+5V=5, +/-5V=10)
Total Supply Voltage (Max) (+5V=5, +/-5V=10)
GBW (Typ) (MHz)
Slew Rate (Typ) (V/us)
Rail-to-Rail
Vos (Offset Voltage @ 25C) (Max) (mV)
Iq per channel (Typ) (mA)
Vn at 1kHz (Typ) (nV/rtHz)
Rating
Operating Temperature Range (C)
Package Group
Package Size: mm2:W x L (PKG)
Offset Drift (Typ) (uV/C)
Features
Input Bias Current (Max) (pA)
CMRR (Typ) (dB)
Output Current (Typ) (mA)
Architecture
LMV342-N LMV341-N LMV652
2    1    2   
2.7    2.7    2.7   
5.5    5.5    5.5   
1    1    12   
1    1    2.8   
In to V-
Out   
In to V-
Out   
In to V-
Out   
5    4    1.5   
0.107    0.107    0.11   
39    39    17   
Catalog    Catalog    Catalog   
-40 to 125    -40 to 125    -40 to 125   
SOIC
VSSOP   
SC70    VSSOP   
8SOIC: 29 mm2: 6 x 4.9(SOIC)
8VSSOP: 15 mm2: 4.9 x 3(VSSOP)   
6SC70: 4 mm2: 2.1 x 2(SC70)    8VSSOP: 15 mm2: 4.9 x 3(VSSOP)   
1.9    1.9    6.6   
N/A    Shutdown
Small Size   
N/A   
200    200    100000   
86    86    100   
75    75    15   
CMOS    CMOS    Bipolar   

WEBENCH® Designer LMV342-N

Amplifier Topology
 Non-inverting
 Inverting
Desired Power Supply Voltage
Positive Supply (Vcc):  V
Negative Supply (Vee):  V
Allowed Power Supply(Vcc-Vee) = 2.7 to 5.5 V
Desired Input and Output Requirements
  Min Max
Vin  V  V
Vout  V  V
Minimum Temperature = -40.0 °C
Maximum Temperature = 125.0 °C