SNOS998I February 2002  – October 2015 LMV761 , LMV762 , LMV762Q-Q1

PRODUCTION DATA. 

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings: LMV761, LMV762
    3. 6.3 ESD Ratings: LMV762Q-Q1
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6  2.7-V Electrical Characteristics
    7. 6.7  5-V Electrical Characteristics
    8. 6.8 2-V Switching Characteristics
    9. 6.9 5-V Switching Characteristics
    10. 6.10Typical Characteristics
  7. Detailed Description
    1. 7.1Overview
    2. 7.2Functional Block Diagram
    3. 7.3Feature Description
      1. 7.3.1Basic Comparator
      2. 7.3.2Hysteresis
      3. 7.3.3Input
    4. 7.4Device Functional Modes
      1. 7.4.1Shutdown Mode
  8. Application and Implementation
    1. 8.1Application Information
    2. 8.2Typical Application
      1. 8.2.1Design Requirements
      2. 8.2.2Detailed Design Procedure
      3. 8.2.3Application Curve
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1Layout Guidelines
    2. 10.2Layout Example
  11. 11Device and Documentation Support
    1. 11.1Documentation Support
      1. 11.1.1Related Links
    2. 11.2Community Resources
    3. 11.3Trademarks
    4. 11.4Electrostatic Discharge Caution
    5. 11.5Glossary
  12. 12Mechanical, Packaging, and Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

See (1)(2)
MINMAXUNIT
Supply voltage (V+ – V)5.5V
Differential input voltageSupply Voltage
Voltage between any two pinsSupply Voltage
Output short circuit duration(3)Current at input pin ±5mA
Soldering informationInfrared or convection (20 sec.)235°C
Wave soldering (10 sec.) (Lead temp)260°C
Junction temperature 150°C
Storage temperature, Tstg −65150°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications.
(3) Applies to both single supply and split supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Output current in excess of ±25 mA over long term may adversely affect reliability.

6.2 ESD Ratings: LMV761, LMV762

VALUEUNIT
V(ESD)Electrostatic discharge(2)Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)± 2000V
Machine model± 200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) Unless otherwise specified human body model is 1.5 kΩ in series with 100 pF. Machine model 200 pF.

6.3 ESD Ratings: LMV762Q-Q1

VALUEUNIT
V(ESD)Electrostatic dischargeHuman-body model (HBM), per AEC Q100-002(1)± 2000V
Machine model± 200
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.4 Recommended Operating Conditions

MINMAXUNIT
Supply voltage (V+ – V)2.75.25V
Temperature range −40125°C

6.5 Thermal Information

THERMAL METRIC(1)LMV761LMV762, LMV762Q-Q1UNIT
D (SOIC)DBV (SOT-23)DGK (VSSOP)
8 PINS6 PINS8 PINS
RθJAJunction-to-ambient thermal resistance (2)190265235°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.
(2) The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA) RθJA. All numbers apply for packages soldered directly into a PCB.

6.6 2.7-V Electrical Characteristics

Unless otherwise specified, all limited ensured for TJ = 25°C, VCM = V+ / 2, V+ = 2.7 V, V = 0 V.
PARAMETERTEST CONDITIONSMIN(4)TYP(3)MAX(4)UNIT
VOSInput offset voltage0.2mV
apply at the temperature extremes(2)1
IBInput bias current(5)0.250pA
IOSInput offset current(5)0.0015pA
CMRRCommon-mode rejection ratio0 V < VCM < VCC – 1.3 V80100dB
PSRRPower supply rejection ratioV+ = 2.7 V to 5 V80110dB
CMVRInput common-mode voltage rangeCMRR > 50 dBapply at the temperature extremes(2)−0.3 1.5V
VOOutput swing highIL = 2 mA, VID = 200 mVV+ – 0.35V+ – 0.1V
Output swing lowIL = −2 mA, VID = –200 mV90250mV
ISCOutput short circuit current(1)Sourcing, VO = 1.35 V, VID = 200 mV620mA
Sinking, VO = 1.35 V, VID = –200 mV615
ISSupply current LMV761 (single comparator)275700μA
LMV762, LMV762Q-Q1 (both comparators)550μA
apply at the temperature extremes(2)1400
IOUT LEAKAGEOutput leakage I at shutdownSD = GND, VO = 2.7 V0.2μA
IS LEAKAGESupply leakage I at shutdownSD = GND, VCC = 2.7 V0.22μA
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. See Recommended Operating Conditions for information on temperature de-rating of this device. Absolute Maximum Rating indicate junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.
(2) Maximum temperature ensured range is −40°C to +125°C.
(3) Typical values represent the most likely parametric norm.
(4) All limits are specified by testing or statistical analysis.
(5) Specified by design.

6.7 5-V Electrical Characteristics

Unless otherwise specified, all limited ensured for TJ = 25°C, VCM = V+ / 2, V+ = 5 V, V = 0 V.
PARAMETERTEST CONDITIONSMIN(4)TYP(3)MAX(4)UNIT
VOSInput offset voltage0.2mV
apply at the temperature extremes(2)1
IBInput bias current(5)0.250pA
IOSInput offset current(5)0.015pA
CMRRCommon-mode rejection ratio0 V < VCM < VCC – 1.3 V80100dB
PSRRPower supply rejection ratioV+ = 2.7 V to 5 V80110dB
CMVRInput common-mode voltage rangeCMRR > 50 dBapply at the temperature extremes(2)−0.3 3.8V
VOOutput swing highIL = 4 mA, VID = 200 mVV+ – 0.35V+ – 0.1V
Output swing lowIL = –4 mA, VID = –200 mV120250mV
ISCOutput short circuit current(1)Sourcing, VO = 2.5 V, VID = 200 mV660mA
Sinking, VO = 2.5 V, VID = −200 mV640
ISSupply current LMV761 (single comparator)225700μA
LMV762, LMV762Q-Q1 (both comparators)450μA
apply at the temperature extremes(2)1400
IOUT LEAKAGEOutput leakage I at shutdownSD = GND, VO = 5 V0.2μA
IS LEAKAGESupply leakage I at shutdownSD = GND, VCC = 5 V0.22μA
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. See Recommended Operating Conditions for information on temperature de-rating of this device. Absolute Maximum Rating indicate junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.
(2) Maximum temperature ensured range is −40°C to +125°C.
(3) Typical values represent the most likely parametric norm.
(4) All limits are specified by testing or statistical analysis.
(5) Specified by design.

6.8 2-V Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
tPDPropagation delay
RL = 5.1 kΩ
CL = 50 pF
Overdrive = 5 mV270ns
Overdrive = 10 mV205
Overdrive = 50 mV120
tSKEWPropagation delay skew5ns
trOutput rise time 10% to 90%1.7ns
tfOutput fall time90% to 10%1.8ns
tonTurnon time from shutdown6μs

6.9 5-V Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
tPDPropagation delay
RL = 5.1 kΩ
CL = 50 pF
Overdrive = 5 mV225ns
Overdrive = 10 mV190
Overdrive = 50 mV120
tSKEWPropagation delay skew5ns
trOutput rise time 10% to 90%1.7ns
tfOutput fall time90% to 10%1.5ns
tonTurnon time from shutdown4μs

6.10 Typical Characteristics

LMV761 LMV762 LMV762Q-Q1 20037004.gif
VO = High
Figure 1. PSI vs VCC
LMV761 LMV762 LMV762Q-Q1 20037010_A.gif
Figure 3. VOS vs VCC
LMV761 LMV762 LMV762Q-Q1 20037025.gif
Figure 5. Input Bias vs Common Mode at 25°C
LMV761 LMV762 LMV762Q-Q1 20037012.gif
Figure 7. Output Voltage vs Supply Voltage
LMV761 LMV762 LMV762Q-Q1 20037014.gif
Figure 9. Output Voltage vs Supply Voltage
LMV761 LMV762 LMV762Q-Q1 20037007.gif
Figure 11. ISINK vs VOUT
LMV761 LMV762 LMV762Q-Q1 20037009.gif
Figure 13. ISINK vs VOUT
LMV761 LMV762 LMV762Q-Q1 20037020.gif
Figure 15. Response Time vs Input Overdrives Positive Transition
LMV761 LMV762 LMV762Q-Q1 20037022.gif
Figure 17. Response Time vs Input Overdrives Negative Transition
LMV761 LMV762 LMV762Q-Q1 20037005.gif
VO = Low
Figure 2. PSI vs VCC
LMV761 LMV762 LMV762Q-Q1 20037024.gif
Figure 4. Input Bias vs Common Mode at 25°C
LMV761 LMV762 LMV762Q-Q1 20037011.gif
Figure 6. Output Voltage vs Supply Voltage
LMV761 LMV762 LMV762Q-Q1 20037013.gif
Figure 8. Output Voltage vs Supply Voltage
LMV761 LMV762 LMV762Q-Q1 20037006.gif
Figure 10. ISOURCE vs VOUT
LMV761 LMV762 LMV762Q-Q1 20037008.gif
Figure 12. ISOURCE vs VOUT
LMV761 LMV762 LMV762Q-Q1 20037019.gif
Figure 14. Prop Delay vs Overdrive
LMV761 LMV762 LMV762Q-Q1 20037021.gif
Figure 16. Response Time vs Input Overdrives Positive Transition
LMV761 LMV762 LMV762Q-Q1 20037023.gif
Figure 18. Response Time vs Input Overdrives Negative Transition