SBAS796 July 2017 ONET2804TLP

PRODUCTION DATA. 

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1Absolute Maximum Ratings
    2. 6.2ESD Ratings
    3. 6.3Recommended Operating Conditions
    4. 6.4DC Electrical Characteristics
    5. 6.5AC Electrical Characteristics
    6. 6.6Timing Requirements
    7. 6.7Typical Characteristics: General
    8. 6.8Typical Characteristics: Eye Diagrams
  7. Detailed Description
    1. 7.1Overview
    2. 7.2Functional Block Diagram
    3. 7.3Feature Description
      1. 7.3.1Signal Path
      2. 7.3.2Gain Adjustment
      3. 7.3.3Amplitude Adjustment
      4. 7.3.4Rate Select
      5. 7.3.5Threshold Adjustment
      6. 7.3.6Filter Circuitry
      7. 7.3.7AGC and RSSI
    4. 7.4Device Functional Modes
      1. 7.4.1Pad Control
      2. 7.4.2Two-Wire Interface Control
    5. 7.5Programming
      1. 7.5.1Bus Idle
      2. 7.5.2Start Data Transfer
      3. 7.5.3Stop Data Transfer
      4. 7.5.4Data Transfer
      5. 7.5.5Acknowledge
    6. 7.6Register Maps
      1. 7.6.1 Register Descriptions
      2. 7.6.2 Register 0: Control Settings (address = 00h) [reset = 0h]
      3. 7.6.3 Register 1: Amplitude and Rate for Channel 1 (address = 01h) [reset = 0h]
      4. 7.6.4 Register 2: Threshold and Gain for Channel 1 (address = 02h) [reset = 0h]
      5. 7.6.5 Register 7: Amplitude and Rate for Channel 2 (address = 07h) [reset = 0h]
      6. 7.6.6 Register 8: Threshold and Gain for Channel 1 (address = 08h) [reset = 0h]
      7. 7.6.7 Register 13: Amplitude and Rate for Channel 3 (address = 0Dh) [reset = 0h]
      8. 7.6.8 Register 14: Threshold and Gain for Channel 3 (address = 0Eh) [reset = 0h]
      9. 7.6.9 Register 19: Amplitude and Rate for Channel 4 (address = 13h) [reset = 0h]
      10. 7.6.10Register 20: Threshold and Gain for Channel 4 (address = 14h) [reset = 0h]
  8. Application and Implementation
    1. 8.1Application Information
    2. 8.2Typical Applications
      1. 8.2.1Pad Control Application
        1. 8.2.1.1Design Requirements
        2. 8.2.1.2Detailed Design Procedure
        3. 8.2.1.3Application Curves
      2. 8.2.2Two-Wire Control Application
        1. 8.2.2.1Design Requirements
        2. 8.2.2.2Detailed Design Procedure
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1Layout Guidelines
    2. 10.2Layout Example
  11. 11Device and Documentation Support
    1. 11.1Receiving Notification of Documentation Updates
    2. 11.2Community Resources
    3. 11.3Trademarks
    4. 11.4Electrostatic Discharge Caution
    5. 11.5Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Features

  • 4-Channel Multi-Rate Operation: Up to 28 Gbps
  • Dissipation at a 3-V Supply: 90 mW per Channel
  • Differential Transimpedance: 7.5 kΩ
  • Bandwidth: 17.5 GHz
  • Input-Referred Noise: 2 μArms
  • Input Overload Current: 3.2 mAPP
  • Programmable Output Voltage
  • Adjustable Gain and Bandwidth
  • Received Signal Strength Indicator (RSSI) for Each Channel
  • Isolation Between Channels (Die Only): 40 dB
  • Single Supply: 2.8 V to 3.3 V
  • Pad Control or 2-Wire Control
  • On-Chip Filter Capacitors
  • –40°C to +100°C Operation
  • Die Size: 3250 μm × 1450 μm, 750-μm Channel Pitch

Applications

  • 100 Gigabit Ethernet Optical Receivers
  • ITU OTL4.4
  • CFP2, CFP4, and QSFP28 Modules with Internal Retiming

Description

The ONET2804TLP device is a high-gain, limiting transimpedance amplifier (TIA) for parallel optical interconnects with data rates up to 28 Gbps. The device is used in conjunction with a 750-μm pitch photodiode array to convert an optical signal into a differential output voltage. An internal circuit provides the photodiode reverse bias voltage and senses the average photocurrent supplied to each photodiode.

The device can be used with pin control or a two-wire serial interface to allow control of the output amplitude, gain, bandwidth, and input threshold.

The ONET2804TLP provides 17.5-GHz bandwidth, a gain of 7.5 kΩ, an input-referred noise of 2 µArms, and a received signal strength indicator (RSSI) for each channel. 40-dB isolation between channels results in low crosstalk penalty in the receiver.

The device requires a single 2.8-V to 3.3-V supply and typically dissipates 90 mW per channel with a differential output amplitude of 300 mVPP. The device is characterized for operation from –40°C to +100°C and is available in die form with a 750-μm channel pitch.

Device Information(1)

PART NUMBERPACKAGEBODY SIZE (NOM)
ONET2804TLPBase Die in Waffle Pack3250 µm × 1450 µm
  1. For all available packages, see the orderable addendum at the end of the datasheet.

Simplified Schematic

ONET2804TLP sbas796_first_page_simplified_schem.gif

Eye Diagram

ONET2804TLP D012_sbas796.png