SBOS153B September 2000  – January 2016 OPA541


  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1Absolute Maximum Ratings
    2. 6.2ESD Ratings
    3. 6.3Recommended Operating Conditions
    4. 6.4Thermal Information
    5. 6.5Electrical Characteristics
    6. 6.6Typical Characteristics
  7. Detailed Description
    1. 7.1Overview
    2. 7.2Functional Block Diagram
    3. 7.3Feature Description
    4. 7.4Device Functional Modes
  8. Application and Implementation
    1. 8.1Application Information
      1. 8.1.1Current Limit
      2. 8.1.2Heat Sinking
      3. 8.1.3Safe Operating Area
      4. 8.1.4Replacing Hybrid Power Amplifiers
    2. 8.2Typical Applications
      1. 8.2.1Clamping Output for EMF-Generating Loads
        1. Requirements
        2. Design Procedure
          1. Supply Requirements
          2. Limit and SOA (Safe Operating Area)
          3. Sinking
        3. Curve
      2. 8.2.2Paralleled Operation, Extended SOA
        1. Requirements
      3. 8.2.3Programmable Voltage Source
        1. Requirements
      4. 8.2.416-Bit Programmable Voltage Source
        1. Requirements
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1Layout Guidelines
    2. 10.2Layout Example
  11. 11Device and Documentation Support
    1. 11.1Documentation Support
      1. 11.1.1Related Documentation
    2. 11.2Community Resources
    3. 11.3Trademarks
    4. 11.4Electrostatic Discharge Caution
    5. 11.5Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
Supply voltage, +VS to –VS 80V
Output currentSee SOA, Figure 11
Power dissipation, Internal(2)125W
Input voltage, differential+VS
Input voltage, common-mode+VS
Temperature, pin solder, 10 s300°C
Junction temperature(2)150°C
Operating temperature (case)AP–4085°C
AM, BM, SM–55125
Storage temperature, TstgAM, BM, SM–65150°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to achieve high MTTF.

6.2 ESD Ratings

V(ESD)Electrostatic dischargeHuman-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)±2000V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)±250
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
Supply Voltage (V+ – V–)10 (±5) 80 (±40) V
Specified temperature –40 125 °C

6.4 Thermal Information

KV (TO-220)LMF (TO-3)
RθJAJunction-to-ambient thermal resistance 21.5°C/W
RθJC(top)Junction-to-case (top) thermal resistance 17.4°C/W
RθJBJunction-to-board thermal resistance 9.2°C/W
ψJTJunction-to-top characterization parameter 1.5°C/W
ψJBJunction-to-board characterization parameter 9.2°C/W
RθJC(bot)Junction-to-case (bottom) thermal resistance 0.13°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

At TC= 25°C and VS = ±35 VDC, unless otherwise noted.
VOS Input offset voltageSpecified temperature range
VS = ±10 V to ±VMAX
OPA541AM/AP ±2 ±10 mV
vs temperatureOPA541AM/AP±20±40µV/°C
vs supply voltageOPA541AM/AP,
vs power±20±60µV/W
IBInput bias current450pA
IOSInput offset current±1±30pA
Specified temperature range5nA
Common-mode voltage rangeSpecified temperature range±(|VS| – 6)±(|VS| – 3)V
Common-mode rejectionVCM = (|±VS| – 6 V)95113dB
Input capacitance5pF
Input impedance, DC1
Open-loop gain at 10 HzRL = 6 Ω9097dB
Gain-bandwidth product1.6MHz
Voltage swingIO = 5 A, continuous±(|VS| – 5.5)±(|VS| – 4.5)V
IO = 2 A±(|VS| – 4.5)±(|VS| – 3.6)
IO = 0.5 A±(|VS| – 4)±(|VS| – 3.2)
Peak current910A
Slew rate610V/µs
Power bandwidthRL = 8 Ω, VO = 20 Vrms4555kHz
Settling time to 0.1%2-V Step2µs
Capacitive loadSpecified temperature range, G = 13.3nF
Specified temperature range, G > 10SOA(1)
Phase marginSpecified temperature range, RL = 8 Ω40°C
±VSPower supply voltageSpecified temperature range±10±30±35V
Quiescent current2025mA
TCASETemperature rangeAM, BM, AP–2585°C
(1) SOA is the Safe Operating Area shown in Figure 11.

6.6 Typical Characteristics

At TA = 25°C, VS = ±35 VDC, unless otherwise noted.
OPA541 sbos153_typchar_1.gif
Figure 1. Input Bias Current vs Temperature
OPA541 sbos153_typchar_3.gif
Figure 3. Normalized Quiescent Current vs Total Power Supply Voltage
OPA541 sbos153_typchar_5.gif
Figure 5. Voltage Noise Density vs Frequency
OPA541 sbos153_typchar_7.gif
Figure 7. Current Limit vs Resistance Limit
OPA541 sbos153_typchar_9.gif
Figure 9. Common-Mode Rejection vs Frequency
OPA541 sbos153_typchar_2.gif
Figure 2. Open-Loop Gain and Phase vs Frequency
OPA541 sbos153_typchar_4.gif
Figure 4. Output Voltage Swing vs Output Current
OPA541 sbos153_typchar_6.gif
Figure 6. Total Harmonic Distortion + Noise vs Frequency
OPA541 sbos153_typchar_8.gif
Figure 8. Current Limit vs Resistance Limit vs Temperature
OPA541 sbos153_typchar_10.gif
Figure 10. Dynamic Response