SN54AS10 Triple 3-Input Positive-NAND Gates | TI.com

SN54AS10 (ACTIVE) Triple 3-Input Positive-NAND Gates

Triple 3-Input Positive-NAND Gates - SN54AS10
Datasheet
 

Description

These devices contain three independent 3-input positive-NAND gates. They perform the Boolean functions or in positive logic.

The SN54ALS10A and SN54AS10 are characterized for operation over the full military temperature range of -55°C to 125°C. The SN74ALS10A and SN74AS10 are characterized for operation from 0°C to 70°C.

 

 

Features

  • Package Options Include Plastic Small-Outline (D) Packages, Ceramic Chip Carriers (FK), and Standard Plastic (N) and Ceramic (J) 300-mil DIPs

 

Parametrics

Compare all products in NAND gate Email Download to Excel
Part number Order Technology Family VCC (Min) (V) VCC (Max) (V) Channels (#) Inputs per channel IOL (Max) (mA) IOH (Max) (mA) Input type Output type Features Rating Data rate (Max) (Mbps) Operating temperature range (C) Package size: mm2:W x L (PKG) Package Group
SN54AS10 Order now AS     4.5     5.5     3     3     0.4     -8     Bipolar     Push-Pull     Ultra High Speed (tpd <5ns)     Military     125     -55 to 125     14CDIP: 130 mm2: 6.67 x 19.56 (CDIP | 14)     CDIP | 14    
SN74AS10 Samples not available AS     4.5     5.5     3     3     20     -2     Bipolar     Push-Pull     Ultra High Speed (tpd <5ns)     Catalog     125     0 to 70     14PDIP: 181 mm2: 9.4 x 19.3 (PDIP | 14)
14SO: 80 mm2: 7.8 x 10.2 (SO | 14)
14SOIC: 52 mm2: 6 x 8.65 (SOIC | 14)    
PDIP | 14
SOIC | 14
SO | 14