TLC272

ACTIVE

Dual, 16-V, 2-MHz, In to V- operational amplifier

A newer version of this product is available

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Drop-in replacement with upgraded functionality to the compared device
TLV9102 ACTIVE Dual, 16-V, 1.1-MHz, low-power operational amplifier Pin-to-pin upgrade with improved performance: lower Vos(1.5mV), higher slew rate(4.5V/us) and output current(80mA)

Product details

Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 3 Rail-to-rail In to V- GBW (typ) (MHz) 2 Slew rate (typ) (V/µs) 3.6 Vos (offset voltage at 25°C) (max) (mV) 10 Iq per channel (typ) (mA) 0.7 Vn at 1 kHz (typ) (nV√Hz) 25 Rating Catalog Operating temperature range (°C) -40 to 85 Offset drift (typ) (µV/°C) 1.8 Input bias current (max) (pA) 60 CMRR (typ) (dB) 80 Iout (typ) (A) 0.01 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -0.8 Output swing headroom (to negative supply) (typ) (V) 0.03 Output swing headroom (to positive supply) (typ) (V) -1.2
Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 3 Rail-to-rail In to V- GBW (typ) (MHz) 2 Slew rate (typ) (V/µs) 3.6 Vos (offset voltage at 25°C) (max) (mV) 10 Iq per channel (typ) (mA) 0.7 Vn at 1 kHz (typ) (nV√Hz) 25 Rating Catalog Operating temperature range (°C) -40 to 85 Offset drift (typ) (µV/°C) 1.8 Input bias current (max) (pA) 60 CMRR (typ) (dB) 80 Iout (typ) (A) 0.01 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -0.8 Output swing headroom (to negative supply) (typ) (V) 0.03 Output swing headroom (to positive supply) (typ) (V) -1.2
PDIP (P) 8 92.5083 mm² 9.81 x 9.43 SOIC (D) 8 29.4 mm² 4.9 x 6 SOP (PS) 8 48.36 mm² 6.2 x 7.8 TSSOP (PW) 8 19.2 mm² 3 x 6.4
  • Trimmed Offset Voltage:
           TLC277 . . . 500 uV Max at 25°C, VDD = 5 V
  • Input Offset Voltage Drift ...Typically 0.1 uV/Month, Including the First 30 Days
  • Wide Range of Supply Voltages Over Specified Temperature Range:
           0°C to 70°C ...3 V to 16 V
           –40°C to 85°C ...4 V to 16 V
           –55°C to 125°C ...4 V to 16 V
  • Single-Supply Operation
  • Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix, I-Suffix types)
  • Low Noise ...Typically 25 nV/Hz at f = 1 kHz
  • Output Voltage Range Includes Negative Rail
  • High Input impedance ...1012 Typ
  • ESD-Protection Circuitry
  • Small-Outline Package Option Also Available in Tape and Reel
  • Designed-In Latch-Up Immunity

LinCMOS is a trademark of Texas Instruments.

  • Trimmed Offset Voltage:
           TLC277 . . . 500 uV Max at 25°C, VDD = 5 V
  • Input Offset Voltage Drift ...Typically 0.1 uV/Month, Including the First 30 Days
  • Wide Range of Supply Voltages Over Specified Temperature Range:
           0°C to 70°C ...3 V to 16 V
           –40°C to 85°C ...4 V to 16 V
           –55°C to 125°C ...4 V to 16 V
  • Single-Supply Operation
  • Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix, I-Suffix types)
  • Low Noise ...Typically 25 nV/Hz at f = 1 kHz
  • Output Voltage Range Includes Negative Rail
  • High Input impedance ...1012 Typ
  • ESD-Protection Circuitry
  • Small-Outline Package Option Also Available in Tape and Reel
  • Designed-In Latch-Up Immunity

LinCMOS is a trademark of Texas Instruments.

The TLC272 and TLC277 precision dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching those of general-purpose BiFET devices.

These devices use Texas Instruments silicon-gate LinCMOS™ technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.

The extremely high input impedance, low bias currents, and high slew rates make these cost-effective devices ideal for applications previously reserved for BiFET and NFET products. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC272 (10 mV) to the high-precision TLC277 (500 uV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.

In general, many features associated with bipolar technology are available on LinCMOS™ operational amplifiers without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC272 and TLC277. The devices also exhibit low voltage single-supply operation, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.

A wide range of packaging options is available, including small-outline and chip carrier versions for high-density system applications.

The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.

The TLC272 and TLC277 incorporate internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.

The TLC272 and TLC277 precision dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching those of general-purpose BiFET devices.

These devices use Texas Instruments silicon-gate LinCMOS™ technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.

The extremely high input impedance, low bias currents, and high slew rates make these cost-effective devices ideal for applications previously reserved for BiFET and NFET products. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC272 (10 mV) to the high-precision TLC277 (500 uV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.

In general, many features associated with bipolar technology are available on LinCMOS™ operational amplifiers without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC272 and TLC277. The devices also exhibit low voltage single-supply operation, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.

A wide range of packaging options is available, including small-outline and chip carrier versions for high-density system applications.

The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.

The TLC272 and TLC277 incorporate internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.

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Technical documentation

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Type Title Date
* Data sheet LinCMOS Precision Dual Operational-Amplifiers datasheet (Rev. E) 25 Feb 2002
* Errata Errata for TLC272/2A/2B/2Y/77 Data Sheet SLOS091E: Error in Elec Characteristics 13 Apr 2011
E-book The Signal e-book: A compendium of blog posts on op amp design topics 28 Mar 2017
Application note TLC272 and TLC277 EMI Immunity Performance 31 Dec 2013

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

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User guide: PDF
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User guide: PDF
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Simulation model

TLC272, TLC272A, TLC272B PSpice Model

SLOJ092.ZIP (3 KB) - PSpice Model
Calculation tool

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CIRCUIT060074 — High-side current sensing with comparator circuit

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Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

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Simulation tool

TINA-TI — SPICE-based analog simulation program

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User guide: PDF
Reference designs

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Test report: PDF
Schematic: PDF
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Schematic: PDF
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Test report: PDF
Schematic: PDF
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Test report: PDF
Schematic: PDF
Reference designs

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Test report: PDF
Schematic: PDF
Reference designs

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Test report: PDF
Schematic: PDF
Package Pins Download
PDIP (P) 8 View options
SOIC (D) 8 View options
SOP (PS) 8 View options
TSSOP (PW) 8 View options

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