The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly improved slew rate and unity-gain bandwidth.
The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices.
The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. This means that a precision device remains a precision device even with changes in temperature and over years of use.
This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices the ideal choice for low-level signal conditioning applications in either single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry that eliminates an unexpected change in output states when one of the inputs goes below the negative supply rail.
A variety of available options includes small-outline and chip-carrier versions for high-density systems applications.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from 40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of 55°C to 125°C.
All trademarks are the property of their respective owners.
|Part number||Order||Number of channels (#)||Total supply voltage (Min) (+5V=5, +/-5V=10)||Total supply voltage (Max) (+5V=5, +/-5V=10)||GBW (Typ) (MHz)||Slew rate (Typ) (V/us)||Rail-to-rail||Vos (offset voltage @ 25 C) (Max) (mV)||Iq per channel (Typ) (mA)||Vn at 1 kHz (Typ) (nV/rtHz)||Rating||Operating temperature range (C)||Package Group||Package size: mm2:W x L (PKG)||Offset drift (Typ) (uV/C)||Features||Input bias current (Max) (pA)||CMRR (Typ) (dB)||Output current (Typ) (mA)||Architecture|
||4||4||40||2||0.5||In to V-||1.1||0.2||17||Catalog||-55 to 125||
PDIP | 14
SOIC | 16
14PDIP: 181 mm2: 9.4 x 19.3 (PDIP | 14)
16SOIC: 77 mm2: 7.5 x 10.3 (SOIC | 16)
||1||4||40||1.7||0.5||In to V-||0.6||0.2||17||Catalog||
-40 to 85
0 to 70
PDIP | 8
SOIC | 8
8PDIP: 93 mm2: 9.43 x 9.81 (PDIP | 8)
8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)
||1||4||40||1.7||0.5||In to V-||0.6||0.2||17||HiRel Enhanced Product||
-40 to 125
-55 to 125
|SOIC | 8||8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)||2||70000||110||3||Bipolar|
|TLE2021-Q1||Samples not available||1||4||40||1.7||0.5||In to V-||0.6||0.17||17||Automotive||-40 to 125||SOIC | 8||8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)||2||70000||110|