TLV2313 Low-Power, RRIO, 750-uV Offset, 1-MHz Operational Amplifier for Cost-Sensitive Systems | TI.com

TLV2313 (ACTIVE)

Low-Power, RRIO, 750-uV Offset, 1-MHz Operational Amplifier for Cost-Sensitive Systems

 

Description

The TLV313 family of single-, dual-, and quad-channel precision operational amplifiers combine low power consumption with good performance. This makes them suitable for a wide range of applications, such as wearables, utility metering, building automation, currency counters and more. The family features rail-to-rail input and output (RRIO) swings, low quiescent current (65 µA, typical), wide bandwidth (1 MHz) and very low noise (26 nV/√Hz at 1 kHz), making it attractive for a variety of battery-powered applications that require a good balance between cost and performance. Further, low-input-bias current enables these devices to be used in applications with megaohm source impedances.

The robust design of the TLV313 devices provides ease-of-use to the circuit designer: unity-gain stability with capacitive loads of up to 150 pF, integrated RF/EMI rejection filter, no phase reversal in overdrive conditions, and high electrostatic discharge (ESD) protection (4-kV HBM).

The devices are optimized for operation at voltages as low as +1.8 V (±0.9 V) and up to +5.5 V (±2.75 V), and are specified over the extended temperature range of –40°C to +125°C.

The single-channel TLV313 device is available in both SC70-5 and SOT23-5 packages. The dual-channel TLV2313 device is offered in SOIC-8 and VSSOP-8 packages, and the quad-channel TLV4313 device is offered in a TSSOP-14 package.

Features

  • Precision Amplifier for Cost-Sensitive Systems
  • Low IQ: 65 µA/ch
  • Wide Supply Range: 1.8 V to 5.5 V
  • Low Noise: 26 nV/√Hz at 1 kHz
  • Gain Bandwidth: 1 MHz
  • Rail-to-Rail Input/Output
  • Low Input Bias Current: 1 pA
  • Low Offset Voltage: 0.75 mV
  • Unity-Gain Stable
  • Internal RF/EMI Filter
  • Extended Temperature Range:
    –40°C to +125°C

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Parametrics Compare all products in General-purpose op amps

 
Number of channels (#)
Total Supply Voltage (Min) (+5V=5, +/-5V=10)
Total Supply Voltage (Max) (+5V=5, +/-5V=10)
GBW (Typ) (MHz)
Slew Rate (Typ) (V/us)
Rail-to-rail
Vos (offset voltage @ 25 C) (Max) (mV)
Iq per channel (Typ) (mA)
Vn at 1 kHz (Typ) (nV/rtHz)
Rating
Operating temperature range (C)
Package Group
Package size: mm2:W x L (PKG)
Offset drift (Typ) (uV/C)
Features
Input bias current (Max) (pA)
CMRR (Typ) (dB)
Output current (Typ) (mA)
Architecture
TLV2313 OPA2313 TLV9002 TLV9062
2     2     2     2    
1.8     1.8     1.8     1.8    
5.5     5.5     5.5     5.5    
1     1     1     10    
0.5     0.5     2     6.5    
In
Out    
In
Out    
In
Out    
In
Out    
3     2.5     1.5     1.6    
0.065     0.05     0.06     0.538    
26     25     28     16    
Catalog     Catalog     Catalog     Catalog    
-40 to 125     -40 to 125     -40 to 125     -40 to 125    
SOIC | 8
VSSOP | 8    
SOIC | 8
SON | 8
VSSOP | 8    
SOIC | 8
TSSOP | 8
VSSOP | 10
VSSOP | 8
WSON | 8
X2QFN | 10    
SOIC | 8
TSSOP | 8
VSSOP | 10
VSSOP | 8
WSON | 8    
8SOIC: 29 mm2: 6 x 4.9 (SOIC | 8)
8VSSOP: 15 mm2: 4.9 x 3 (VSSOP | 8)    
8SOIC: 29 mm2: 6 x 4.9 (SOIC | 8)
See datasheet (SON)
8VSSOP: 15 mm2: 4.9 x 3 (VSSOP | 8)    
8SOIC: 29 mm2: 6 x 4.9 (SOIC | 8)
8TSSOP: 19 mm2: 6.4 x 3 (TSSOP | 8)
10VSSOP: 9 mm2: 3 x 3 (VSSOP | 10)
8VSSOP: 15 mm2: 4.9 x 3 (VSSOP | 8)
See datasheet (WSON)
10X2QFN: 3 mm2: 2 x 1.5 (X2QFN | 10)    
8SOIC: 29 mm2: 6 x 4.9 (SOIC | 8)
8TSSOP: 19 mm2: 6.4 x 3 (TSSOP | 8)
10VSSOP: 9 mm2: 3 x 3 (VSSOP | 10)
8VSSOP: 15 mm2: 4.9 x 3 (VSSOP | 8)
See datasheet (WSON)    
2     2     0.6     0.53    
Cost Optimized
EMI Hardened    
EMI Hardened
Small Size    
Cost Optimized
EMI Hardened
Shutdown
Small Size    
Cost Optimized
EMI Hardened
Shutdown
Small Size    
  10        
85     80     90     103    
15     15     15     50    
CMOS     CMOS     CMOS     CMOS