TLV6001-Q1 Low-Power, RRIO, 1-MHz, Operational Amplifier for Cost-Sensitive Systems | TI.com

TLV6001-Q1 (ACTIVE)

Low-Power, RRIO, 1-MHz, Operational Amplifier for Cost-Sensitive Systems

 

Description

The TLV600x-Q1 family of single and dual-channel operational amplifiers is specifically designed for general-purpose automotive applications. Featuring rail-to-rail input and output (RRIO) swings, low quiescent current (75 µA, typical), wide bandwidth (1 MHz) and low noise (28 nV/√Hz at 1 kHz), this family is attractive for a variety of automotive applications that require a good balance between cost and performance, such as infotainment, engine control units, and automotive lighting. The low-input-bias current (±1 pA, typical) enables the TLV600x-Q1 to be used in applications with megaohm source impedances.

The robust design of the TLV600x-Q1 provides ease-of use to the circuit designer: unity-gain stability with capacitive loads of up to 150 pF, integrated RF/EMI rejection filter, no phase reversal in overdrive conditions, and high electrostatic discharge (ESD) protection (4-kV HBM).

The devices are optimized for operation at voltages as low as 1.8 V (±0.9 V) and up to 5.5 V (±2.75 V), and are specified over the extended temperature range of –40°C to +125°C.

The single-channel TLV6001-Q1 is available in the SC70-5 package, and the dual-channel TLV6002-Q1 is available in both SOIC and VSSOP packages.

Features

  • AEC-Q100 Qualified for Automotive Applications
    • Device Temperature Grade 1: –40°C to +125°C, TA
    • Device HBM ESD Classification Level 3A
    • Device CDM ESD Classification Level C6
  • General-Purpose Amplifiers for Cost-Sensitive Systems
  • Supply Range: 1.8 V to 5.5 V
  • Gain Bandwidth: 1 MHz
  • Low Quiescent Current: 75 µA/ch
  • Rail-to-Rail Input and Output
  • Low Offset Voltage: 0.75 mV
  • Unity-Gain Stable
  • Input Voltage Noise Density: 28 nV/√Hz at 1 kHz
  • Internal RF and EMI Filter
  • Extended Temperature Range:
    –40°C to 125°C

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Parametrics

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Part number Order Number of channels (#) Total supply voltage (Min) (+5V=5, +/-5V=10) Total supply voltage (Max) (+5V=5, +/-5V=10) GBW (Typ) (MHz) Slew rate (Typ) (V/us) Rail-to-rail Vos (offset voltage @ 25 C) (Max) (mV) Iq per channel (Typ) (mA) Vn at 1 kHz (Typ) (nV/rtHz) Rating Operating temperature range (C) Package Group Package size: mm2:W x L (PKG) Offset drift (Typ) (uV/C) Features Input bias current (Max) (pA) CMRR (Typ) (dB) Output current (Typ) (mA) Architecture
TLV6001-Q1 Order now 1     1.8     5.5     1     0.5     In
Out    
4.5     0.075     28     Automotive     -40 to 125     SC70 | 5     5SC70: 4 mm2: 2.1 x 2 (SC70 | 5)     2     Cost Optimized
EMI Hardened
Small Size    
76     76     15     CMOS    
OPA2313-Q1 Order now 2         1     0.5     In
Out    
2.5     0.05     25     Automotive     -40 to 125     SOIC | 8
VSSOP | 8    
8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)
8VSSOP: 15 mm2: 4.9 x 3 (VSSOP | 8)    
2     EMI Hardened
Small Size    
10     80     15     CMOS    
TLV2313-Q1 Order now 2         1     0.5     In
Out    
3     0.065     26     Automotive     -40 to 125     SOIC | 8
VSSOP | 8    
8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)
8VSSOP: 15 mm2: 4.9 x 3 (VSSOP | 8)    
2     Cost Optimized
EMI Hardened
Small Size    
  85     15     CMOS    
TLV313-Q1 Order now 1     1.8     5.5     1     0.5     In
Out    
3     0.065     26     Automotive     -40 to 125     SC70 | 5     5SC70: 4 mm2: 2.1 x 2 (SC70 | 5)     2     Cost Optimized
EMI Hardened
Small Size    
  85     15     CMOS    
TLV6002-Q1 Order now 2     1.8     5.5     1     0.5