(ACTIVE) 500 nA RRIO Nanopower Operational Amplifier


Functional Diagram


The TLV854x ultra-low-power operational amplifiers (op amps) are intended for cost-optimized sensing applications in wireless and low-power wired equipment. The TLV854x family of op amps minimize power consumption in equipment such as motion detecting security systems (like microwave and PIR motion sensing) where operational battery life is critical. They also have a carefully designed CMOS input stage, enabling very low, femto-ampere bias currents, thereby reducing IBIAS and IOS errors that would otherwise impact sensitive applications. Examples of these include transimpedance amplifier (TIA) configurations with megaohm feedback resistors, and high source impedance sensing applications. Additionally, built-in EMI protection reduces sensitivity to unwanted RF signals from sources such as mobile phones, WiFi, radio transmitters and tab readers.

The TLV854x op amps operates with a single supply voltage down to 1.7 V supply, providing continuous performance in low battery situations over the extended temperature range of –40°C to +125°C. All versions are specified for operation from –40°C to 125°C. The TLV8541 (single version) is available in the 5-pin SOT-23 while the TLV8542 (dual version) is available in the 8-pin SOIC package. The 4-channel TLV8544 (quad version) is available in the industry standard 14-pin TSSOP package.


  • For Cost-Optimized Systems
  • Nanopower Supply Current: 500 nA per Channel
  • Offset Voltage: 3.1 mV (maximum)
  • TcVos: 0.8 µV/°C
  • Gain Bandwidth: 8 kHz
  • Unity-Gain Stable
  • Low Input-Bias Current: 100 fA
  • Wide Supply Range: 1.7 V to 3.6 V
  • Rail-to-Rail Input and Output (RRIO)
  • Temperature Range –40°C to +125°C
  • Industry Standard Package
    • Quad in 14-pin TSSOP and SOIC
    • Dual in 8-pin SOIC
    • Single in 5-pin SOT-23
  • Leadless Package
    • Dual in 8-Pin X2QFN

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Number of Channels (#) 2    
Total Supply Voltage (Min) (+5V=5, +/-5V=10) 1.7    
Total Supply Voltage (Max) (+5V=5, +/-5V=10) 3.6    
Iq per channel (Max) (mA) 0.00064    
Iq per channel (Typ) (mA) 0.0005    
Vos (Offset Voltage @ 25C) (Max) (mV) 3.1    
Offset Drift (Typ) (uV/C) 0.8    
GBW (Typ) (MHz) 0.008    
Slew Rate (Typ) (V/us) 0.0035    
Rail-to-Rail In^Out    
Rating Catalog    
Operating Temperature Range (C) -40 to 125    
Package Group SOIC|8^X2QFN|8    
Features Cost Optimized^EMI Hardened    
Package Size: mm2:W x L (PKG) 8SOIC: 29 mm2: 6 x 4.9 (SOIC|8)^8X2QFN: 2 mm2: 1.5 x 1.5 (X2QFN|8)    
Vn at 1kHz (Typ) (nV/rtHz) 264    
Output Current (Typ) (mA) 15    
Architecture CMOS    
CMRR (Typ) (dB) 80    

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