500 nA Quad, RRIO, Nanopower Operational Amplifier for Cost-Optimized Systems - TLV8544

TLV8544 (ACTIVE)

500 nA Quad, RRIO, Nanopower Operational Amplifier for Cost-Optimized Systems

 

Description

The TLV854x ultra-low-power operational amplifiers (op amps) are intended for cost-optimized sensing applications in wireless and low-power wired equipment. The TLV854x family of op amps minimize power consumption in equipment such as motion detecting security systems (like microwave and PIR motion sensing) where operational battery life is critical. They also have a carefully designed CMOS input stage, enabling very low, femto-ampere bias currents, thereby reducing IBIAS and IOS errors that would otherwise impact sensitive applications. Examples of these include transimpedance amplifier (TIA) configurations with megaohm feedback resistors, and high source impedance sensing applications. Additionally, built-in EMI protection reduces sensitivity to unwanted RF signals from sources such as mobile phones, WiFi, radio transmitters and tab readers.

The TLV854x op amps operates with a single supply voltage down to 1.7 V supply, providing continuous performance in low battery situations over the extended temperature range of –40°C to +125°C. All versions are specified for operation from –40°C to 125°C. The TLV8541 (single version) is available in the 5-pin SOT-23 while the TLV8542 (dual version) is available in the 8-pin SOIC package. The 4-channel TLV8544 (quad version) is available in the industry standard 14-pin TSSOP package.

Features

  • For Cost-Optimized Systems
  • Nanopower Supply Current: 500 nA per Channel
  • Offset Voltage: 3.1 mV (maximum)
  • TcVos: 0.8 µV/°C
  • Gain Bandwidth: 8 kHz
  • Unity-Gain Stable
  • Low Input-Bias Current: 100 fA
  • Wide Supply Range: 1.7 V to 3.6 V
  • Rail-to-Rail Input and Output (RRIO)
  • Temperature Range –40°C to +125°C
  • Industry Standard Package
    • Quad in 14-pin TSSOP
    • Dual in 8-pin SOIC
    • Single in 5-pin SOT-23

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Parametrics Compare all products in Ultra-Low-Power Op Amps (<=10uA)

 
Number of Channels (#)
Total Supply Voltage (Min) (+5V=5, +/-5V=10)
Total Supply Voltage (Max) (+5V=5, +/-5V=10)
Iq per channel (Max) (mA)
Iq per channel (Typ) (mA)
Vos (Offset Voltage @ 25C) (Max) (mV)
Offset Drift (Typ) (uV/C)
GBW (Typ) (MHz)
Slew Rate (Typ) (V/us)
Rail-to-Rail
Rating
Operating Temperature Range (C)
Package Group
Features
Package Size: mm2:W x L (PKG)
Vn at 1kHz (Typ) (nV/rtHz)
Output Current (Typ) (mA)
Architecture
CMRR (Typ) (dB)
TLV8544 TLV8542 TLV8801 TLV8802 TLV8811 TLV8812
4    2    1    2    1    2   
1.7    1.7    1.7    1.7    1.7    1.7   
3.6    3.6    5.5    5.5    5.5    5.5   
0.00064    0.00064    0.0007    0.00065    0.00075    0.0007   
0.0005    0.0005    0.00045    0.00032    0.00045    0.000425   
3.1    3.1    4.5    4.5    0.55    0.5   
0.8    0.8    1    1    1    1   
0.008    0.008    0.006    0.006    0.006    0.006   
0.0035    0.0035    0.0015    0.0015    0.0015    0.0015   
In
Out   
In
Out   
In to V-
Out   
In to V-
Out   
In to V-
Out   
In to V-
Out   
Catalog    Catalog    Catalog    Catalog    Catalog    Catalog   
-40 to 125    -40 to 125    -40 to 125    -40 to 125    -40 to 125    -40 to 125   
TSSOP    SOIC    SOT-23    VSSOP    SOT-23    VSSOP   
Cost Optimized
EMI Hardened   
Cost Optimized
EMI Hardened   
Cost Optimized
EMI Hardened   
Cost Optimized
EMI Hardened   
Cost Optimized
EMI Hardened   
Cost Optimized
EMI Hardened   
14TSSOP: 32 mm2: 6.4 x 5(TSSOP)    8SOIC: 29 mm2: 6 x 4.9(SOIC)    5SOT-23: 8 mm2: 2.8 x 2.9(SOT-23)    8VSSOP: 15 mm2: 4.9 x 3(VSSOP)    5SOT-23: 8 mm2: 2.8 x 2.9(SOT-23)    8VSSOP: 15 mm2: 4.9 x 3(VSSOP)   
264    264    450    450    450    450   
15    15    4.7    4.7    4.7    4.7   
CMOS    CMOS    CMOS    CMOS    CMOS    CMOS   
75    80    90    90    95    98