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TPS1120

ACTIVE

Dual P-channel Enhancemenent-Mode MOSFET

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Data sheet

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TPS1120

ACTIVE
Data sheet Order now

Product details

VDS (V) -15 Rating Catalog Operating temperature range (°C) to
VDS (V) -15 Rating Catalog Operating temperature range (°C) to
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Low rDS(on) . . . 0.18 at VGS = -10 V
  • 3-V Compatible
  • Requires No External VCC
  • TTL and CMOS Compatible Inputs
  • VGS(th) = -1.5 V Max
  • ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015

LinBICMOS is a trademark of Texas Instruments Incorporated
  • Low rDS(on) . . . 0.18 at VGS = -10 V
  • 3-V Compatible
  • Requires No External VCC
  • TTL and CMOS Compatible Inputs
  • VGS(th) = -1.5 V Max
  • ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015

LinBICMOS is a trademark of Texas Instruments Incorporated

The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOSTM process, for 3-V or 5-V power distribution in battery-powered systems. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 uA, the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, where maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120 includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in small-outline integrated circuit SOIC packages.

The TPS1120 is characterized for an operating junction temperature range, TJ, from -40°C to 150°C.

Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated voltages to these high-impedance circuits.

The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOSTM process, for 3-V or 5-V power distribution in battery-powered systems. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 uA, the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, where maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120 includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in small-outline integrated circuit SOIC packages.

The TPS1120 is characterized for an operating junction temperature range, TJ, from -40°C to 150°C.

Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated voltages to these high-impedance circuits.

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* Data sheet Dual P-Channel Enhancement-Mode MOSFETs datasheet (Rev. A) 01 Aug 1995

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SOIC (D) 8 View options
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