TPS65295 4.5-V to 18-V VIN complete DDR4 memory power solution | TI.com

TPS65295 (ACTIVE) 4.5-V to 18-V VIN complete DDR4 memory power solution

Datasheet
 

Description

The TPS65295 device provides a complete power solution for DDR4 memory system with the lowest total cost and minimum space. It meets the JEDEC standard for DDR4 power-up and power-down sequence requirement. The TPS65295 integrates two synchronous buck converters (VPP and VDDQ) and a 1-A sink and source tracking LDO (VTT) and a buffered low noise reference (VTTREF). The TPS65295 employs D-CAP3™ mode coupled with 600-kHz switching frequency for ease-of-use, fast transient, and support for ceramic output capacitors without an external compensation circuit.

The VTTREF tracks ½ VDDQ within excellent 0.8% accuracy. The VTT, which provides both 1-A sink and source continual current capabilities, requires only 10-µF of ceramic output capacitor.

The TPS65295 provides rich functions as well as excellent power supply performance. It supports flexible power state control, placing VTT at high-Z in S3 and discharging VDDQ, VTT, and VTTREF in S4/S5 state. OVP, UVP, OCP, UVLO and thermal shutdown protections are also available. The part is available in a thermally enhanced 18-pin HotRod™ VQFN package and is designed to operate under the –40°C to 125°C junction temperature range.

Features

  • Synchronous buck converter (VDDQ)
    • Input voltage range: 4.5 V to 18 V
    • Output voltage fixed at 1.2 V
    • D-CAP3™ mode control for fast transient response
    • Continual output current: 8 A
    • Advanced Eco-mode™ pulse skip
    • Integrated 22-mΩ and 8.6-mΩ RDS(on) internal power switch
    • 600-kHz switching frequency
    • Internal soft start: 1.6 ms
    • Cycle-by-cycle overcurrent protection
    • Latched output OV and UV protections
  • Synchronous buck converter (VPP)
    • Input voltage range: 3 V to 5.5 V
    • Output voltage fixed at 2.5 V
    • D-CAP3™ mode control for fast transient response
    • Continual output current: 1 A
    • Advanced Eco-mode™ pulse skip
    • Integrated 150-mΩ and 120-mΩ RDS(on) internal power switch
    • 580-kHz switching frequency
    • Internal soft start: 1 ms
    • Cycle-by-cycle overcurrent protection
    • Latched output OV and UV protections
  • 1-A LDO (VTT)
    • 1-A continual sink and source current
    • Requires only 10 µF of ceramic output capacitor
    • Support high-z in S3
    • ±30-mV VTT output accuracy (DC+AC)
  • Buffered reference (VTTREF)
    • Buffered, low noise, ±10-mA capability
    • 0.8% output accuracy
  • Low quiescent current: 150 µA
  • Power good indicator
  • Output discharge function
  • Power up and power down sequencing control
  • Non-latch for OT and UVLO protections
  • 18-pin 3.0-mm × 3.0-mm HotRod™ VQFN package

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Parametrics

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Part number Order DDR memory type Iout VDDQ (Max) (A) Iout VTT (Max) (A) Output Vin (Min) (V) Vin (Max) (V) Features Rating Operating temperature range (C) Package Group Package size: mm2:W x L (PKG)
TPS65295 Order now DDR4     8     1     VDDQ
VREF
VTT    
4.5     18     Complete Solution     Catalog     -40 to 125     VQFN-HR | 18     18VQFN-HR: 9 mm2: 3 x 3 (VQFN-HR | 18)