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TS3A5223

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0.45-Ω on-state resistance, 3.3-V, 2:1 (SPDT), 2-channel analog switch with 1-V logic

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Data sheet

TS3A5223

ACTIVE
Data sheet Order now

Product details

Configuration 2:1 SPDT Number of channels 2 Power supply voltage - single (V) 1.8, 2.5, 3.3 Protocols Analog Ron (typ) (Ω) 0.45 CON (typ) (pF) 115 ON-state leakage current (max) (µA) 0.06 Supply current (typ) (µA) 150 Bandwidth (MHz) 80 Operating temperature range (°C) -40 to 85 Features 1.8-V compatible control inputs, Break-before-make Input/output continuous current (max) (mA) 300 Rating Catalog Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
Configuration 2:1 SPDT Number of channels 2 Power supply voltage - single (V) 1.8, 2.5, 3.3 Protocols Analog Ron (typ) (Ω) 0.45 CON (typ) (pF) 115 ON-state leakage current (max) (µA) 0.06 Supply current (typ) (µA) 150 Bandwidth (MHz) 80 Operating temperature range (°C) -40 to 85 Features 1.8-V compatible control inputs, Break-before-make Input/output continuous current (max) (mA) 300 Rating Catalog Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
UQFN (RSW) 10 2.52 mm² 1.8 x 1.4
  • Low ON Resistance Switches
    • 0.45 Ω (Typical) at 3.6 V
    • 0.85 Ω (Typical) at 1.8 V
  • Wide Supply Range: 1.65 V to 3.6 V
  • 1.0 V Compatible Logic Interface
  • High Switch Bandwidth 80 MHz
  • 0.01% THD Across Entire Band
  • Specified min Break-before-make
  • Bi-directional Switching
  • –75 dB Channel-to-Channel Crosstalk
  • –70 dB Channel-to-Channel OFF Isolation of Very Low Power Dissipation and Leakage Currents
  • Very Small QFN-10 Package: 1.8 mm × 1.4 mm
  • ESD Protection on all Pins
    • 2 kV HBM, 500 V CDM
  • Low ON Resistance Switches
    • 0.45 Ω (Typical) at 3.6 V
    • 0.85 Ω (Typical) at 1.8 V
  • Wide Supply Range: 1.65 V to 3.6 V
  • 1.0 V Compatible Logic Interface
  • High Switch Bandwidth 80 MHz
  • 0.01% THD Across Entire Band
  • Specified min Break-before-make
  • Bi-directional Switching
  • –75 dB Channel-to-Channel Crosstalk
  • –70 dB Channel-to-Channel OFF Isolation of Very Low Power Dissipation and Leakage Currents
  • Very Small QFN-10 Package: 1.8 mm × 1.4 mm
  • ESD Protection on all Pins
    • 2 kV HBM, 500 V CDM

The TS3A5223 is a high-speed 2-channel analog switch with break-before-make and bi-directional signal switching capability. The TS3A5223 can be used as a dual 2:1 multiplexer or a 1:2 dual de-multiplexer.

The TS3A5223 offers very low ON resistance, very low THD, channel-to-channel crosstalk and very high OFF isolation. These features make TS3A5223 suitable for application in Audio signal routing and switching applications.

The TS3A5223 control logic supports 1 V – 3.6 V CMOS logic levels. The logic interface allows direct interface with a wide range of CPUs and microcontrollers without increasing the current drawn from supply (ICC) and thus lowering power consumption.

The TS3A5223 is a high-speed 2-channel analog switch with break-before-make and bi-directional signal switching capability. The TS3A5223 can be used as a dual 2:1 multiplexer or a 1:2 dual de-multiplexer.

The TS3A5223 offers very low ON resistance, very low THD, channel-to-channel crosstalk and very high OFF isolation. These features make TS3A5223 suitable for application in Audio signal routing and switching applications.

The TS3A5223 control logic supports 1 V – 3.6 V CMOS logic levels. The logic interface allows direct interface with a wide range of CPUs and microcontrollers without increasing the current drawn from supply (ICC) and thus lowering power consumption.
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Type Title Date
* Data sheet TS3A5223 0.45 Ω 2-Channel SPDT Bidirectional Analog Switch datasheet (Rev. B) PDF | HTML 11 Apr 2017
Application brief 1.8-V Logic for Multiplexers and Signal Switches (Rev. C) PDF | HTML 26 Jul 2022
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 02 Jun 2022
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 01 Dec 2021
Application note Preventing Excess Power Consumption on Analog Switches 03 Jul 2008
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 Jul 2004

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