TXS02326A Dual-Supply 2:1 SIM Card Multiplexer/Translator with Automatic Detect and slot dedicated dual LDO | TI.com

TXS02326A (ACTIVE)

Dual-Supply 2:1 SIM Card Multiplexer/Translator with Automatic Detect and slot dedicated dual LDO

 

Description

The TXS02326A is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with two individual SIM subscriber cards to store data for mobile handset applications. It is a custom device which is used to extend a single SIM/UICC interface to support two SIMs/UICCs.

The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a high-speed level translator capable of supporting Class-B (2.95-V) and Class-C (1.8-V) interfaces; two low-dropout (LDO) voltage regulators with output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces; an integrated "fast-mode" 400 kb/s "slave" I2C control register interface, for configuration purposes; and a 32-kHz clock input, for internal timing generation. The TXS02326A also includes a shutdown input and a comparator input that detects battery pack removal to safely power-down the two SIM cards. The shutdown input and comparator input are equipped with two programmable debounce counter (i.e. BSI input and SDN input) circuits realized by an 8 bit counter.

The voltage-level translator has two supply voltage pins. VDDIO sets the reference for the baseband interface and can be operated from 1.7-V to 3.3-V. VSIM1 and VSIM2 are programmed to either 1.8-V or 2.95-V, each supplied by an independent internal LDO regulator. The integrated LDO accepts input battery voltages from 2.3-V to 5.5-V and outputs up to 50 mA to the B-side circuitry and external Class-B or Class-C SIM card.

Features

  • Level Translator
    • VDDIO Range of 1.7-V to 3.3-V
  • Low-Dropout (LDO) Regulator
    • 50-mA LDO Regulator With Enable
    • 1.8-V or 2.95-V Selectable Output Voltage
    • 2.3-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 100 mV (Max) at 50 mA
  • Control and Communication Through I2C Interface
    With Baseband Processor
  • ESD Protection Exceeds JESD 22
    • 2500-V Human-Body Model (A114-B)
    • 6000-V Human-Body Model (A114-B) on VSIM1, SIM1CLK,
      SIM1I/O, SIM1RST, VSIM2, SIM2CLK, SIM2I/O, SIM2RST
    • 1000-V Charged-Device Model (C101)
  • Package
    • 24-Pin QFN (4 mm × 4 mm)

View more

Parametrics Compare all products in Application specific voltage translation

 
Application
Bits (#)
High input voltage (Min) (Vih)
High input voltage (Max) (Vih)
Output voltage (Min) (V)
Output voltage (Max) (V)
IOH (Max) (mA)
IOL (Max) (mA)
Features
Package Group
Rating
TXS02326A TXS02324 TXS4555 TXS4558
SIM Card     SIM Card     SIM Card     SIM Card    
6     6     3     6    
0.9     1.19     1.155     1.19    
3.6     1.9     3.3     3.3    
0.74     1.36     1.65     1.7    
3.6     3.3     3.3     3.3    
    -1     -0.1    
    1     1    
Edge rate accelerator
Dual LDO    
Edge rate accelerator
Dual LDO    
Single LDO     Dual LDO    
VQFN | 24     WQFN | 20     UQFN | 12
VQFN | 16    
WQFN | 20    
Catalog     Catalog     Catalog     Catalog